MMBT5401 TRANSISTOR(PNP) SOT-23 FEATURES Complementary to MMBT5551 z Ideal for medium power amplification and switching z 1. BASE 2. EMITTER 3. COLLECTOR - MARKING: 2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC= -100μA, Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, Emitter-base breakdown voltage V(BR)EBO IE= -10μA, IC=0 IE=0 IB=0 MIN MAX UNIT -160 V -150 V -5 V Collector cut-off current ICBO VCB=-120 V , IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-4V , -0.1 μA hFE1 VCE= -5V, IC= -1mA 80 hFE2 VCE= -5V, IC=-10mA 100 hFE3 VCE= -5V, IC=-50mA 50 DC current gain IC=0 300 Collector-emitter saturation voltage VCE(sat) IC=-50 mA, IB= -5mA -0.5 V Base-emitter saturation voltage VBE(sat) IC= -50 mA, IB= -5mA -1 V Transition frequency fT VCE= -5V, f=30MHz IC= -10mA 100 MHz １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MMBT5401 ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５