TN3019A C TO-226 BE NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 80 V VCBO Collector-Base Voltage 140 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current - Continuous 1.0 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units TN3019A 1.0 8.0 125 W mW/°C °C/W 50 °C/W TN3019A Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 30 mA, IB = 0 80 V V(BR)CBO Collector-Base Breakdown Voltage I C = 100 µA, I E = 0 140 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 100 µA, IC = 0 7.0 ICBO Collector-Cutoff Current IEBO Emitter-Cutoff Current VCB = 90 V, IE = 0 VCB = 90 V, IE = 0, TA = 150°C VEB = 5.0 V, IC = 0 V 0.01 10 0.01 µA µA µA ON CHARACTERISTICS hFE DC Current Gain VCE(sat ) Collector-Emitter Saturation Voltage VBE( sat) Base-Emitter Saturation Voltage I C = 0.1 mA, VCE = 10 V I C = 10 mA, VCE = 10 V I C = 150 mA, VCE = 10 V I C=150 mA, VCE=10 V,TA= -55°C I C = 500 mA, VCE = 10 V* I C = 1.0 A, VCE = 10 V* I C = 150 mA, IB = 15 mA I C = 500 mA, IB = 50 mA I C = 10 mA, IB = 1.0 mA 50 90 100 40 50 15 I C = 50 mA, VCE = 10 V, f = 20 MHz VCB = 10 V, IE = 0, f = 1.0 MHz 100 300 0.2 0.5 1.1 V V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cobo Output Capacitance Cibo Input Capacitance VBE = 0.5 V, IC = 0, f = 1.0 MHz hfe Small-Signal Current Gain rb’Cc Collector Base Time Constant NF Noise Figure I C = 1.0 mA, VCE = 5.0 V, f = 1.0 MHz I E = 10 mA, VCB = 10 V, f = 4.0 MHz I C = 100 mA, VCE = 10 V, RS = 1.0 kΩ, f = 1.0 kHz *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0% 80 MHz 12 pF 60 pF 400 400 pS 4.0 dB TN3019A NPN General Purpose Amplifier (continued) Typical Pulsed Current Gain vs Collector Current 350 V CE = 1V 300 125 °C 250 200 25 °C 150 - 40 °C 100 50 0 0.1 0.3 1 3 10 30 100 300 I C - COLLECTOR CURRENT (mA) 1000 VCESAT- COLLECTOR EMITTER VOLTAGE (V) hFE - TYPICAL PULSED CURRENT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 1.2 β = 10 1 0.8 0.6 25 °C 0.4 - 40 ºC 0.2 125 ºC 0 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 Base-Emitter Saturation Voltage vs Collector Current β = 10 0.8 - 40 ºC 25 °C 125 ºC 0.4 0 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 VBEON - BASE EMITTER ON VOLTAGE (V) VBESAT- BASE EMITTER VOLTAGE (V) P 12 Base Emitter ON Voltage vs Collector Current 1 0.8 - 40 ºC 25 °C 0.6 125 ºC 0.4 VCE= 1V 0.2 0 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 P 12 Collector-Base and Emitter-Base Capacitance vs Reverse Bias Voltage 100 10 f = 1.0 MHz VCB = 80V CAPACITANCE (pF) ICBO- COLLECTOR CURRENT (nA) Collector-Cutoff Current vs. Ambient Temperature 1 0.1 25 50 75 100 TA - AMBIENT TEMPERATURE ( º C) 125 80 60 40 Ceb 20 0 0.1 C cb 1 10 REVERSE BIAS VOLTAGE (V) P 12 50 TN3019A NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Switching Times vs Collector Current f = 20 MHz 1000 8 800 VCE = 10V 6 TIME (ns) h FE - SMALL SIGNAL CURRENT GAIN Small Signal Current Gain at 20 MHz 10 4 VCE = 1.0V 2 600 400 200 tr 0 1 I C 10 100 - COLLECTOR CURRENT (mA) 0 10 500 tf ts td 100 500 I C - COLLECTOR CURRENT (mA) 1000 P 12 Power Dissipation vs Ambient Temperature Turn On and Turn Off Times vs Collector Current 1 1000 TIME (ns) 800 PD - POWER DISSIPATION (W) I B1 = I B2 = I C V CC = 50V 10 600 400 t off 200 t on 0 10 I C 100 500 - COLLECTOR CURRENT (mA) P 12 1000 TO-226 0.75 0.5 0.25 0 0 25 50 75 100 TEMPERATURE (o C) 125 150 TN3019A NPN General Purpose Amplifier (continued) Test Circuit - 4.0 V IC Rb RL 150 mA 200 mA 500 mA 314 Ω 157 Ω 94 Ω 330 Ω 167 Ω 100 Ω 50 V Ω 1.0 KΩ - 1 µF RL Rb 50 Ω 1.5 µS 10 V 0V Pulse Source Rise Time ≤ 5.0 ns Fall Time ≤ 10 ns FIGURE 1: tON, tOFF Test Circuit To Sampling Scope Rise Time ≤ 5.0 ns Input Z ≈ 100 kΩ TN3019A NPN General Purpose Amplifier