SECOS PZT3904

PZT3904
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
RoHS Compliant Product
FEATURES
E
Power dissipation
P CM : 1 W˄Tamb=25ć˅
BASE
2.
COLLECTOR
3.
EMITTER
C
B
fe
e
f
f f 1
ELECTRICAL CHARACTERISTICS (Tamb=25Я
Symbol
fe
e
fe
e
Collector current
I CM : 0.2 A
Collector-base voltage
V (BR)CBO : 6 0 V
Operating and storage junction temperature range
T JˈTstg: -55ć to +150ć
Parameter
1.
f
5
5
C
f
SOT-223
unless
Test
otherwise
conditions
2
3
Unit : mm
specified)
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=10µA,IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=1mA,IB=0
40
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA,IC=0
6
V
Collector cut-off current
ICBO
VCB=60V,IE=0
0.1
µA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
µA
hFE(1)
VCE=10V,IC=0.1mA
40
hFE(2)
VCE=1V,IC=1mA
70
hFE(3)
VCE=1V,IC=10mA
100
hFE(4)
VCE=1V,IC=50mA
60
hFE(5)
VCE=1V,IC=100mA
30
VCE(sat)
IC=10mA,IB=1mA
0.2
V
VCE(sat)
IC=50mA,IB=5mA
0.3
V
VBE(sat)
IC=10mA,IB=1mA
0.85
V
VBE(sat)
IC=50mA,IB=5mA
0.95
V
DC current gain
300
Collector-emitter saturation voltage
0.65
Base-emitter saturation voltage
Transition frequency
fT
Collector output capacitance
Cob
Noise figure
NF
VCE=20V,IC=10mA,f=100MHz
VCB=5V,IE=0,f=1MHz
VCE=5V,Ic=0.1mA,
f=10HZ to 15.7KHz,Rg=1Kȍ
300
MHz
4
pF
5
dB
Delay time
td
VCC=3V,
35
nS
Rise time
tr
IC=10mA,VBE(off)=0.5V,IB1=1mA
35
nS
Storage time
tS
VCC=3V, IC=10mA
200
nS
Fall time
tf
IB1= IB2= 1mA
50
nS
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 5
PZT3904
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
+3 V
Duty Cycle = 2%
300 ns
+10.9 V
t1
10 < t1 < 500 s
275
Duty Cycle = 2%
10 k
+3 V
+10.9 V
275
10 k
0
– 0.5 V
CS < 4 pF*
< 1 ns
CS < 4 pF*
1N916
– 9.1 V′
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C
TJ = 125°C
5000
10
2000
Cibo
3.0
Cobo
2.0
0.2 0.3
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Q, Charge (pC)
Capacitance (pF)
5.0
1.0
0.1
VCC = 40 V
IC/IB = 10
3000
7.0
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
1000
700
500
QT
300
200
100
70
50
QA
1.0
2.0 3.0
5.0 7.0 10
20
30
Reverse Bias Voltage (V)
I C, Collector Current (mA)
Figure 3. Capacitance
Figure 4. Charge Data
50 70 100
200
Any changing of specification will not be informed individual
Page 2 of 5
PZT3904
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
500
500
IC/IB = 10
tr @ VCC = 3.0 V
50
30
20
40 V
15 V
10
7
5
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
300
200
IC/IB = 20
100
70
50
30
20
10
2.0 V
td @ VOB = 0 V
7
5
200
5.0 7.0 10
20
30
Figure 5. Turn – On Time
Figure 6. Rise Time
IC/IB = 20
50
IC/IB = 10
30
20
7
5
50 70 100
200
IC/IB = 10
30
20
10
30
IC/IB = 20
100
70
50
7
5
20
200
VCC = 40 V
IB1 = IB2
300
200
10
5.0 7.0 10
50 70 100
500
t′s = ts – 1/8 tf
IB1 = IB2
IC/IB = 10
2.0 3.0
2.0 3.0
I C, Collector Current (mA)
100
70
1.0
1.0
I C, Collector Current (mA)
500
ts′ , Storage Time (ns)
t r , Rise Time (ns)
100
70
VCC = 40 V
IC/IB = 10
300
200
t f , Fall Time (ns)
Time (ns)
300
200
1.0
2.0 3.0
5.0 7.0 10
I C, Collector Current (mA)
20
30
50 70 100
200
I C, Collector Current (mA)
Figure 7. Storage Time
Figure 8. Fall Time
TYPICAL AUDIO SMALL– SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
14
12
SOURCE RESISTANCE = 200
IC = 1.0 mA
SOURCE RESISTANCE = 200
IC = 0.5 mA
8
6
SOURCE RESISTANCE = 1.0 k
IC = 50 A
4
2
0
0.1
f = 1.0 kHz
12
NF, Noise Figure (dB)
NF, Noise Figure (dB)
10
IC = 1.0 mA
IC = 0.5 mA
10
IC = 50 A
8
IC = 100 A
6
4
SOURCE RESISTANCE = 500
IC = 100 A
0.2
0.4
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
1.0
2.0
2
4.0
10
20
40
100
0
0.1
0.2
0.4
1.0
2.0
4.0
10
20
f, Frequency (kHz)
R S, Source Resistance (k OHMS)
Figure 9.
Figure 10.
40
100
Any changing of specification will not be informed individual
Page 3 of 5
PZT3904
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
300
hoe , Output Admittance ( mhos)
100
h fe , Current Gain
200
100
70
50
30
50
20
10
5
2
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I C, Collector Current (mA)
5.0
1
10
0.1
0.2
20
10
10
7.0
5.0
2.0
1.0
0.5
0.2
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I C, Collector Current (mA)
0.5
1.0
2.0 3.0
I C, Collector Current (mA)
5.0
10
5.0
10
Figure 12. Output Admittance
h re , Voltage Feeback Ratio (X 10 –4)
h ie , Input Impedance (k OHMS)
Figure 11. Current Gain
0.3
5.0
5.0
3.0
2.0
1.0
0.7
0.5
10
0.1
Figure 13. Input Impedance
0.2
0.3
0.5
1.0
2.0 3.0
I C, Collector Current (mA)
Figure 14. Voltage Feedback Ratio
TYPICAL STATIC CHARACTERISTICS
h FE, DC Current Gain (Normalized)
2.0
TJ = +125°C
VCE = 1.0 V
+25°C
1.0
0.7
– 55°C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
I C, Collector Current (mA)
Figure 15. DC Current Gain
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 4 of 5
PZT3904
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
1.0
VCE , Collector Emitter Voltage (V)
TJ = 25°C
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.2
0.1
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I B, Base Current (mA)
Figure 16. Collector Saturation Region
1.0
1.2
TJ = 25°C
VBE(sat) @ IC/IB =10
V, Voltage (V)
0.8
VBE @ VCE =1.0 V
0.6
0.4
VCE(sat) @ IC/IB =10
VC FOR VCE(sat)
0
– 55°C TO +25°C
– 0.5
– 55°C TO +25°C
– 1.0
+25°C TO +125°C
VB FOR VBE(sat)
– 1.5
0.2
0
+25°C TO +125°C
0.5
Coefficient (mV/ °C)
1.0
1.0
2.0
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
5.0
10
20
50
100
200
– 2.0
0
20
40
60
80
100
120
140
160
I C, Collector Current (mA)
I C, Collector Current (mA)
Figure 17. “ON” Voltages
Figure 18. Temperature Coefficients
180 200
Any changing of specification will not be informed individual
Page 5 of 5