PZT3904 NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product FEATURES E Power dissipation P CM : 1 W˄Tamb=25ć˅ BASE 2. COLLECTOR 3. EMITTER C B fe e f f f 1 ELECTRICAL CHARACTERISTICS (Tamb=25Я Symbol fe e fe e Collector current I CM : 0.2 A Collector-base voltage V (BR)CBO : 6 0 V Operating and storage junction temperature range T JˈTstg: -55ć to +150ć Parameter 1. f 5 5 C f SOT-223 unless Test otherwise conditions 2 3 Unit : mm specified) MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=10µA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO Ic=1mA,IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10µA,IC=0 6 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 µA hFE(1) VCE=10V,IC=0.1mA 40 hFE(2) VCE=1V,IC=1mA 70 hFE(3) VCE=1V,IC=10mA 100 hFE(4) VCE=1V,IC=50mA 60 hFE(5) VCE=1V,IC=100mA 30 VCE(sat) IC=10mA,IB=1mA 0.2 V VCE(sat) IC=50mA,IB=5mA 0.3 V VBE(sat) IC=10mA,IB=1mA 0.85 V VBE(sat) IC=50mA,IB=5mA 0.95 V DC current gain 300 Collector-emitter saturation voltage 0.65 Base-emitter saturation voltage Transition frequency fT Collector output capacitance Cob Noise figure NF VCE=20V,IC=10mA,f=100MHz VCB=5V,IE=0,f=1MHz VCE=5V,Ic=0.1mA, f=10HZ to 15.7KHz,Rg=1Kȍ 300 MHz 4 pF 5 dB Delay time td VCC=3V, 35 nS Rise time tr IC=10mA,VBE(off)=0.5V,IB1=1mA 35 nS Storage time tS VCC=3V, IC=10mA 200 nS Fall time tf IB1= IB2= 1mA 50 nS http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 5 PZT3904 NPN Silicon Elektronische Bauelemente General Purpose Transistor +3 V Duty Cycle = 2% 300 ns +10.9 V t1 10 < t1 < 500 s 275 Duty Cycle = 2% 10 k +3 V +10.9 V 275 10 k 0 – 0.5 V CS < 4 pF* < 1 ns CS < 4 pF* 1N916 – 9.1 V′ < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 5000 10 2000 Cibo 3.0 Cobo 2.0 0.2 0.3 http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Q, Charge (pC) Capacitance (pF) 5.0 1.0 0.1 VCC = 40 V IC/IB = 10 3000 7.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1000 700 500 QT 300 200 100 70 50 QA 1.0 2.0 3.0 5.0 7.0 10 20 30 Reverse Bias Voltage (V) I C, Collector Current (mA) Figure 3. Capacitance Figure 4. Charge Data 50 70 100 200 Any changing of specification will not be informed individual Page 2 of 5 PZT3904 NPN Silicon Elektronische Bauelemente General Purpose Transistor 500 500 IC/IB = 10 tr @ VCC = 3.0 V 50 30 20 40 V 15 V 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 300 200 IC/IB = 20 100 70 50 30 20 10 2.0 V td @ VOB = 0 V 7 5 200 5.0 7.0 10 20 30 Figure 5. Turn – On Time Figure 6. Rise Time IC/IB = 20 50 IC/IB = 10 30 20 7 5 50 70 100 200 IC/IB = 10 30 20 10 30 IC/IB = 20 100 70 50 7 5 20 200 VCC = 40 V IB1 = IB2 300 200 10 5.0 7.0 10 50 70 100 500 t′s = ts – 1/8 tf IB1 = IB2 IC/IB = 10 2.0 3.0 2.0 3.0 I C, Collector Current (mA) 100 70 1.0 1.0 I C, Collector Current (mA) 500 ts′ , Storage Time (ns) t r , Rise Time (ns) 100 70 VCC = 40 V IC/IB = 10 300 200 t f , Fall Time (ns) Time (ns) 300 200 1.0 2.0 3.0 5.0 7.0 10 I C, Collector Current (mA) 20 30 50 70 100 200 I C, Collector Current (mA) Figure 7. Storage Time Figure 8. Fall Time TYPICAL AUDIO SMALL– SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 14 12 SOURCE RESISTANCE = 200 IC = 1.0 mA SOURCE RESISTANCE = 200 IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 50 A 4 2 0 0.1 f = 1.0 kHz 12 NF, Noise Figure (dB) NF, Noise Figure (dB) 10 IC = 1.0 mA IC = 0.5 mA 10 IC = 50 A 8 IC = 100 A 6 4 SOURCE RESISTANCE = 500 IC = 100 A 0.2 0.4 http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 1.0 2.0 2 4.0 10 20 40 100 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 f, Frequency (kHz) R S, Source Resistance (k OHMS) Figure 9. Figure 10. 40 100 Any changing of specification will not be informed individual Page 3 of 5 PZT3904 NPN Silicon Elektronische Bauelemente General Purpose Transistor h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C) 300 hoe , Output Admittance ( mhos) 100 h fe , Current Gain 200 100 70 50 30 50 20 10 5 2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 I C, Collector Current (mA) 5.0 1 10 0.1 0.2 20 10 10 7.0 5.0 2.0 1.0 0.5 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 I C, Collector Current (mA) 0.5 1.0 2.0 3.0 I C, Collector Current (mA) 5.0 10 5.0 10 Figure 12. Output Admittance h re , Voltage Feeback Ratio (X 10 –4) h ie , Input Impedance (k OHMS) Figure 11. Current Gain 0.3 5.0 5.0 3.0 2.0 1.0 0.7 0.5 10 0.1 Figure 13. Input Impedance 0.2 0.3 0.5 1.0 2.0 3.0 I C, Collector Current (mA) Figure 14. Voltage Feedback Ratio TYPICAL STATIC CHARACTERISTICS h FE, DC Current Gain (Normalized) 2.0 TJ = +125°C VCE = 1.0 V +25°C 1.0 0.7 – 55°C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C, Collector Current (mA) Figure 15. DC Current Gain http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 4 of 5 PZT3904 NPN Silicon Elektronische Bauelemente General Purpose Transistor 1.0 VCE , Collector Emitter Voltage (V) TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.2 0.1 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 I B, Base Current (mA) Figure 16. Collector Saturation Region 1.0 1.2 TJ = 25°C VBE(sat) @ IC/IB =10 V, Voltage (V) 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 VC FOR VCE(sat) 0 – 55°C TO +25°C – 0.5 – 55°C TO +25°C – 1.0 +25°C TO +125°C VB FOR VBE(sat) – 1.5 0.2 0 +25°C TO +125°C 0.5 Coefficient (mV/ °C) 1.0 1.0 2.0 http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 5.0 10 20 50 100 200 – 2.0 0 20 40 60 80 100 120 140 160 I C, Collector Current (mA) I C, Collector Current (mA) Figure 17. “ON” Voltages Figure 18. Temperature Coefficients 180 200 Any changing of specification will not be informed individual Page 5 of 5