SECOS MPS2222A

MPS2222A
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
COLLECTOR
3
2
BASE
ƔFEATURES
. Epitaxial Planar Die Construction
. Complementary PNP Type Available
1
1
EMITTER
2
3
(MPS2907A)
. Ideal for Medium Power Amplification and Switching
ƔMAXIMUM RATINGS
RATING
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
Total Device Dissipation @ TA = 25 к
Derate Above 25 к
Total Device Dissipation @ TC = 25 к
Derate Above 25 к
Operating and Storage Junction Temperature Range
SYMBOL
VCEO
VCBO
VEBO
IC
TJ, TSTG
VALUE
40
75
6.0
600
625
5.0
1.5
12
-55 ~ +150
UNIT
V
V
V
mA
mW
mW / к
Watts
mW / к
к
SYMBOL
RșJA
RșJC
MAX.
200
83.3
UNIT
к/W
к/W
PD
PD
ƔTHERMAL CHARACTERISTICS
CHARACTERISTIC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
ƔELECTRICAL CHARACTERISTICS (T
CHARACTERISTIC
A
= 25 к unless otherwise noted)
SYMBOL
Min.
Max.
UNIT
V(BR)CEO
40
-
V
V(BR)CBO
75
-
V
V(BR)EBO
6.0
-
V
ICEX
-
10
nA
ICBO
-
0.01
10
µA
IEBO
-
10
nA
ICEO
-
10
nA
IBEX
-
20
nA
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
Collector - Base Breakdown Voltage
(IC = 10 µA, IE = 0)
Emitter - Base Breakdown Voltage
(IE = 10 µA, IC = 0)
Collector Cutoff Current
(VCE = 60 V, VEB(oFF) = 3.0 V)
Collector Cutoff Current
(VCB = 60 V, IE = 0)
(VCB = 60 V, IE = 0, TA = 150 к)
Emitter Cutoff Current
(VEB = 3.0 V, IC = 0)
Collector Cutoff Current
(VCE = 10 V)
Base Cutoff Current
(VCE = 60 V, VEB(oFF) = 3.0 V)
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page1 of 6
MPS2222A
NPN Silicon
Elektronische Bauelemente
ƔELECTRICAL CHARACTERISTICS (T
General Purpose Transistor
A
= 25 к unless otherwise noted) (Continued)
CHARACTERISTIC
SYMBOL
Min.
Max.
UNIT
35
50
75
35
100
50
40
300
-
VCE(sat)
-
0.3
1.0
V
VBE(sat)
0.6
-
1.2
2.0
V
fT
300
-
MHz
Cobo
-
8.0
pF
Cibo
-
25
pF
hie
2.0
0.25
8.0
1.25
Kȍ
hre
-
8.0
4.0
X 10-4
hfe
50
75
300
375
-
hoe
5.0
25
35
200
µmhos
rb, CC
-
150
ps
NF
-
4.0
dB
td
tr
ts
tf
-
10
25
225
60
ns
ns
ns
ns
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mA, VCE = 10 V)
(IC = 1.0 mA, VCE = 10 V)
(IC = 10 mA, VCE = 10 V)
(IC = 10 mA, VCE = 10 V, TA = -55 к)
(IC = 150 mA, VCE = 10 V)(1)
(IC = 150 mA, VCE = 1.0 V) (1)
(IC = 500 mA, VCE = 10 V) (1)
Collector - Emitter Saturation Voltage(1)
(IC = 150 mA, IB = 15 mA)
(IC = 500 mA, IB = 50 mA)
Base - Emitter Saturation Voltage(1)
(IC = 150 mA, IB = 15 mA)
(IC = 500 mA, IB = 50 mA)
hFE
-
SMALL - SIGNAL CHARACTERISTICS
Current - Gain - Bandwidth Product(2)
(IC = 20 mA, VCE = 20 V, f = 100 MHz)
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Input Impedance
(IC = 1.0 mA, VCE = 10 V, f = 1.0 KHz)
(IC = 10 mA, VCE = 10 V, f = 1.0 KHz)
Voltage Feedback Ratio
(IC = 1.0 mA, VCE = 10 V, f = 1.0 KHz)
(IC = 10 mA, VCE = 10 V, f = 1.0 KHz))
Small - Signal Current Gain
(IC = 1.0 mA, VCE = 10 V, f = 1.0 KHz)
(IC = 10 mA, VCE = 10 V, f = 1.0 KHz)
Output Admittance
(IC = 1.0 mA, VCE = 10 V, f = 1.0 KHz)
(IC = 10 mA, VCE = 10 V, f = 1.0 KHz)
Collector Base Time Constant
(IE = 20 mA, VCB = 20 V, f = 31.8 KHz)
Noise Figure
(IC = 100 µA, VCE = 10 V, RS = 1.0 Kȍ, f = 1.0 KHz)
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 30 V, VBE(off) = -2.0 V,
Rise Time
IC = 150 mA, IB1 = 15 mA) (Figure 1)
Storage Time (VCC = 30 V, IC = 150 mA,
Fall Time
IB1 = IB2 = 15 mA) (Figure 2)
1. Pulse Test: Pulse Width ” 300 µs, Duty Cycle ” 2.0 %.
2. fT is defined as the frequency at which | hfe | extrapolates to unity.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page2 of 6
MPS2222A
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
ƔSWITCHING TIME EQUIVALENT TEST CIRCUITS
+ā30 V
+ā30 V
1.0 to 100 µs,
DUTY CYCLE ≈ 2.0%
+16 V
200
+16 V
0
0
-ā2 V
1 kΩ
< 2 ns
1.0 to 100 µs,
DUTY CYCLE ≈ 2.0%
CS* < 10 pF
-14 V
1k
< 20 ns
-ā4 V
Figure 2. Turn–Off Time
1000
700
500
hFE , DC CURRENT GAIN
CS* < 10 pF
1N914
Scope rise time < 4 ns
*Total shunt capacitance of test jig,
connectors, and oscilloscope.
Figure 1. Turn–On Time
200
TJ = 125°C
300
200
25°C
100
70
50
-55°C
30
VCE = 1.0 V
VCE = 10 V
20
10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70
100
200
300
500 700 1.0 k
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. DC Current Gain
1.0
TJ = 25°C
0.8
0.6
IC = 1.0 mA
10 mA
150 mA
500 mA
0.4
0.2
0
0.005
0.01
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1.0
IB, BASE CURRENT (mA)
2.0
3.0
5.0
10
20
30
50
Figure 4. Collector Saturation Region
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page3 of 6
MPS2222A
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
200
100
70
50
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
30
20
10
7.0
5.0
200
t′s = ts - 1/8 tf
100
70
50
tf
30
20
10
7.0
5.0
3.0
2.0
5.0 7.0
10
200 300
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
500
5.0 7.0 10
20 30
50 70 100
200
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
8.0
6.0
f = 1.0 kHz
8.0
4.0
2.0
IC = 50 µA
100 µA
500 µA
1.0 mA
6.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
Ceb
10
7.0
5.0
Ccb
3.0
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
20 30
50
f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
f, FREQUENCY (kHz)
20
0.2 0.3
0
50
50 100
30
CAPACITANCE (pF)
500
10
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
IC = 1.0 mA, RS = 150 Ω
500 µA, RS = 200 Ω
100 µA, RS = 2.0 kΩ
50 µA, RS = 4.0 kΩ
300
Figure 6. Turn–Off Time
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
10
2.0
0.1
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
300
t, TIME (ns)
t, TIME (ns)
500
IC/IB = 10
TJ = 25°C
500
VCE = 20 V
TJ = 25°C
300
200
100
70
50
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70 100
Figure 10. Current–Gain Bandwidth Product
Any changing of specification will not be informed individual
Page4 of 6
MPS2222A
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
1.0
+0.5
TJ = 25°C
0
VBE(sat) @ IC/IB = 10
0.6
COEFFICIENT (mV/ °C)
V, VOLTAGE (VOLTS)
0.8
1.0 V
VBE(on) @ VCE = 10 V
0.4
0.2
0
RqVC for VCE(sat)
-ā0.5
-ā1.0
-ā1.5
RqVB for VBE
-ā2.0
VCE(sat) @ IC/IB = 10
0.1 0.2
50 100 200
0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltages
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
500 1.0 k
-ā2.5
0.1 0.2
0.5
1.0 2.0
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
500
Figure 12. Temperature Coefficients
Any changing of specification will not be informed individual
Page5 of 6
MPS2222A
Elektronische Bauelemente
NPN Silicon
General Purpose Transistor
ƔTO-92 PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Ö
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Dimensions In Millimeters
Min
Max
3.300
3.700
1.100
1.400
0.380
0.550
0.360
0.510
4.400
4.700
3.430
4.300
4.700
1.270TYP
2.440
2.640
14.100
14.500
1.600
0.000
0.380
Dimensions In Inches
Min
Max
0.130
0.146
0.043
0.055
0.015
0.022
0.014
0.020
0.173
0.185
0.135
0.169
0.185
0.050TYP
0.096
0.104
0.555
0.571
0.063
0.000
0.015
Any changing of specification will not be informed individual
Page6 of 6