PZT2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product FEATURES Power dissipation P CM : 1 W˄Tamb=25ć˅ B BASE 2. COLLECTOR 3. E 0D[ EMITTER C fe e fe e fe e ELECTRICAL CHARACTERISTICS˄Tamb=25ć Symbol f f Collector current I CM : 0.6 A Collector-base voltage V (BR)CBO : 75 V Operating and storage junction temperature range T JˈTstg: -55ć to +150ć Parameter 1. C f 5 5 f SOT-223 f 1 unless Test otherwise conditions Collector-base breakdown voltage V(BR)CBO Ic= 10Aˈ Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO 2 3 Unit : mm specified˅ MIN MAX UNIT 75 V Ic= 10mAˈ IB=0 40 V IE=10Aˈ IC=0 6 V IE=0 Collector cut-off current ICBO VCB=60V , IE=0 0. 01 A Emitter cut-off current IEBO VEB= 3V , IC=0 0. 01 A hFE(1) VCE=10V, IC= 0.1mA 35 hFE(2) VCE=10V, IC= 1mA 50 hFE(3) VCE=10V, IC= 10mA 75 hFE(4) VCE=10V, IC= 150mA 100 hFE(5) VCE=1V, hFE(6) VCE=10V, DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage IC= 500mA 1 V VCE(sat) IC=150 mA, IB= 15mA 0.3 V VBE(sat) IC=500 mA, IB= 50mA 2.0 V VBE(sat) IC=150 mA, IB=15mA 1.2 V fT Cob VCE=20V, IC= 20mA f=100MHz VCB=10V, I E= 0 f=1MHz td VCC=30V, IC=150mA Rise time tr VBE(off)=0.5V,IB1=15mA Storage time tS VCC=30V, IC=150mA Fall time tf IB1= IB2= 15mA 01-Jun-2002 Rev. A 40 IC=500 mA, IB= 50mA Delay time http://www.SeCoSGmbH.com 50 VCE(sat) Transition frequency Output Capacitance IC= 150mA 300 0.6 300 MHz 8 pF 10 nS 25 nS 225 nS 60 nS Any changing of specification will not be informed individual Page 1 of 4 PZT2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor ƔSWITCHING TIME EQUIVALENT TEST CIRCUITS +ā30 V +ā30 V 1.0 to 100 μs, DUTY CYCLE ≈ 2.0% +16 V 200 +16 V 0 0 -ā2 V 1 kΩ < 2 ns 1.0 to 100 μs, DUTY CYCLE ≈ 2.0% CS* < 10 pF -14 V 1k < 20 ns -ā4 V Figure 2. Turn–Off Time 1000 700 500 hFE , DC CURRENT GAIN CS* < 10 pF 1N914 Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn–On Time 200 TJ = 125°C 300 200 25°C 100 70 50 -55°C 30 VCE = 1.0 V VCE = 10 V 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 700 1.0 k VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain 1.0 TJ = 25°C 0.8 0.6 IC = 1.0 mA 10 mA 150 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 10 20 30 50 Figure 4. Collector Saturation Region http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 4 PZT2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor 200 100 70 50 tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 30 20 10 7.0 5.0 200 t′s = ts - 1/8 tf 100 70 50 tf 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 5. Turn–On Time 8.0 6.0 f = 1.0 kHz 8.0 4.0 2.0 0.5 1.0 2.0 5.0 10 20 6.0 4.0 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects Ceb 10 7.0 5.0 Ccb 3.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) Figure 9. Capacitances http://www.SeCoSGmbH.com/ 20 30 50 f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) f, FREQUENCY (kHz) 20 0.2 0.3 0 50 50 100 30 CAPACITANCE (pF) IC = 50 μA 100 μA 500 μA 1.0 mA 2.0 0 0.01 0.02 0.05 0.1 0.2 01-Jun-2002 Rev. A 500 10 RS = OPTIMUM RS = SOURCE RS = RESISTANCE IC = 1.0 mA, RS = 150 Ω 500 μA, RS = 200 Ω 100 μA, RS = 2.0 kΩ 50 μA, RS = 4.0 kΩ 300 Figure 6. Turn–Off Time NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 2.0 0.1 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 300 t, TIME (ns) t, TIME (ns) 500 IC/IB = 10 TJ = 25°C 500 VCE = 20 V TJ = 25°C 300 200 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 10. Current–Gain Bandwidth Product Any changing of specification will not be informed individual Page 3 of 4 PZT2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor 1.0 +0.5 TJ = 25°C 0 VBE(sat) @ IC/IB = 10 0.6 COEFFICIENT (mV/ °C) V, VOLTAGE (VOLTS) 0.8 1.0 V VBE(on) @ VCE = 10 V 0.4 0.2 0 RqVC for VCE(sat) -ā0.5 -ā1.0 -ā1.5 RqVB for VBE -ā2.0 VCE(sat) @ IC/IB = 10 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 11. “On” Voltages http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A 500 1.0 k -ā2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 Figure 12. Temperature Coefficients Any changing of specification will not be informed individual Page 4 of 4