BC847S NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055(1.40) .047(1.20) o 8 o 0 .026TYP (0.65TYP) .021REF (0.525)REF * Features .053(1.35) .045(1.15) .096(2.45) .085(2.15) Power dissipation PCM : 0.3 W (Tamp.= 25 C) O Collector current ICM .018(0.46) .010(0.26) : 0.2 A .014(0.35) .006(0.15) Collector-base voltage .006(0.15) .003(0.08) .087(2.20) .079(2.00) V(BR)CBO : 50 V .004(0.10) .000(0.00) Operating & Storage junction Temperature O O Tj, Tstg : -55 C~ +150 C .043(1.10) .035(0.90) C1 B2 E2 E1 B1 C2 .039(1.00) .035(0.90) Dimensions in inches and (millimeters) O Electrical Characteristics( Tamb=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=10µA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO Ic=10mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 6 V Collector cut-off current ICBO VCB=30V, IE=0 DC current gain hFE(1) VCE=5V, IC=2mA VCE(sat) IC=10mA, IB=0.5mA 0.25 V VCE(sat)(2) IC=100mA, IB=5mA 0.65 V VBE VCE=5V, IC=2mA 0.7 V VBE(2) VCE=5V, IC=10mA 0.77 V fT VCE=5V, IC=20mA , f=100MHz 200 MHz Cob VCB=10V, IE=0, f=1MHz 2 pF Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance http://www.SeCoSGmbH.com 01-Jan-2006 Rev. B 15 110 nA 630 Any changing of specification will not be informed individual Page 1 of 3 BC847S NPN Silicon Multi-Chip Transistor Elektronische Bauelemente 1000 800 600 25 °C 400 - 40 °C 200 0 0.01 0.03 0.1 0.3 1 3 10 30 I C - COLLECTOR CURRENT (mA) 100 Base-Emitter Saturation Voltage vs Collector Current 1 - 40 °C 0.8 0.6 25 °C 125 °C 0.4 β = 10 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 V CE - COLLECTOR VOLTAGE (V) http://www.SeCoSGmbH.com 01-Jan-2006 Rev. B 10 7 175 MHz 5 3 2 1 0.1 150 MHz 125 MHz 100 MHz 75 MHz 1 10 I C - COLLECTOR CURRENT (mA) 0.3 0.25 100 β = 10 0.2 125 °C 0.15 25 °C 0.1 - 40 °C 0.05 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 Base-Emitter ON Voltage vs Collector Current 1 - 40 °C 0.8 25 °C 0.6 125 °C 0.4 V CE = 5.0 V 0.2 0.1 ° Contours of Constant Gain Bandwidth Product (f T ) VCESAT - COLLECTOR-EMITTER VOLTAGE (V) V CE = 5.0 V 125 °C VBEON- BASE-EMITTER ON VOLTAGE (V) 1200 Collector-Emitter Saturation Voltage vs Collector Current CHARAC TERIS TICS R ELATI VE TO VALUE AT T A = 25 C Typical Pulsed Current Gain vs Collector Current VBESAT - COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics 1 10 I C - COLLECTOR CURRENT (mA) 40 Normalized Collect or-Cutoff Current vs Ambient Temperature 1000 100 10 1 25 50 75 100 125 T A - AMBIE NT TEMP ERATURE ( °C) 150 Any changing of specification will not be informed individual Page 2 of 3 BC847S NPN Silicon Multi-chip Transistor V CE - COLLECTOR VOLTAGE (V) ° Contours of Constant Gain Bandwidth Product (f T ) 10 175 MHz 7 5 150 MHz 3 2 1 0.1 125 MHz 100 MHz 75 MHz 1 10 I C - COLLECTOR CURRENT (mA) CHARAC TERIS TICS R ELATI VE TO VALUE AT T A = 25 C Elektronische Bauelemente 100 Normalized Collect or-Cutoff Current vs Ambient Temperature 1000 100 10 1 25 Noise Figure vs Frequency 5 V CE = 5.0 V NF - NOISE FIGURE (dB) NF - NOISE FIGURE (dB) I C = 200 µA, R S = 10 kΩ I C = 100 µA, R S = 10 kΩ 6 I C = 1.0 mA, R S = 500 Ω 4 I C = 1.0 mA, R S = 5.0 kΩ 2 V CE = 5.0V 0 0.0001 0.001 0.01 0.1 1 f - FREQUENCY (MHz) 150 Wideband Noise Frequency vs Source Resistance 10 8 50 75 100 125 T A - AMBIE NT TEMP ERATURE ( °C) 10 100 4 BANDWIDTH = 15.7 kHz I C = 100 µA 3 I C = 30 µA 2 1 0 1,000 I C = 10 µA 2,000 5,000 10,000 20,000 50,000 100,000 R S - SOURCE RESISTANCE (Ω ) P D - POWER DISSIPATION (mW) Power Dissipation vs Ambient Temperature http://www.SeCoSGmbH.com 01-Jan-2006 Rev. B 500 400 SC70-6 300 200 100 0 0 25 50 75 100 TEMPERATURE (º C) 125 150 Any changing of specification will not be informed individual Page 3 of 3