MMBT4403 PNP Silicon Switching Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 3 C 0.890 1.110 Top View D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 A COLLECTOR L 3 1 BASE 1 3 V 2 EMITTER B S 2 G 1 2 C H D J K All Dimension in mm MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Dissipation 0.3 W TJ, Tstg Junction and Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter unless Symbol otherwise Test specified） conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100μA , IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-35V , IE=0 -0.1 μA Collector cut-off current ICEO VCE=-35 V , IB=0 -0.1 μA Emitter cut-off current IEBO VEB=-4V , -0.1 μA IC=0 DC current gain hFE VCE=-2 V, Collector-emitter saturation voltage VCE(sat) IC=-150 mA, IB=-15mA -0.4 V Base-emitter saturation voltage VBE(sat) IC=- 150 mA, IB=-15mA -0.95 V Transition frequency fT IC= -150mA VCE= -10V, IC= -20mA f = 100MHz 100 200 300 MHz MARKING: 2T http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B Any changing of specification will not be informed individual Page 1 of 4 MMBT4403 PNP Silicon Switching Transistor Elektronische Bauelemente TRANSIENT CHARACTERISTICS 25°C 100°C 30 Ceb VCC = 30 V IC/IB = 10 3.0 Q, CHARGE (nC) CAPACITANCE (pF) 20 10 7.0 5.0 10 7.0 Ccb 5.0 2.0 1.0 0.7 0.5 QT 0.3 QA 0.2 2.0 0.1 0.2 0.3 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 0.1 30 10 20 200 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 3. Capacitances 100 IC/IB = 10 70 70 VCC = 30 V IC/IB = 10 50 50 tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 30 20 t r , RISE TIME (ns) t, TIME (ns) 500 Figure 4. Charge Data 100 30 20 10 10 7.0 7.0 5.0 300 10 20 30 50 70 200 100 300 5.0 500 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn−On Time Figure 6. Rise Time 300 500 200 t s′, STORAGE TIME (ns) IC/IB = 10 100 IC/IB = 20 70 50 IB1 = IB2 ts′ = ts − 1/8 tf 30 20 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B Any changing of specification will not be informed individual Page 2 of 4 MMBT4403 PNP Silicon Switching Transistor Elektronische Bauelemente SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VCE = −10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz 10 10 f = 1 kHz 8 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 8 IC = 1.0 mA, RS = 430 IC = 500 A, RS = 560 IC = 50 A, RS = 2.7 k IC = 100 A, RS = 1.6 k 6 4 2 6 4 2 RS = OPTIMUM SOURCE RESISTANCE 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC = 50 A 100 A 500 A 1.0 mA 0 100 50 100 200 500 1k 2k 5k 10k 20k f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS) Figure 8. Frequency Effects Figure 9. Source Resistance Effects 50k h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 255C This group of graphs illustrates the relationship between hfe and other ªhº parameters for this series of transistors. T o obtain these curves, a high-gain and a low-gain unit were selected from the MMBT4403 lines, and the same units were used to develop the correspondingly numbered curves on each graph. 100 k 700 50 k hfe, CURRENT GAIN 500 300 200 MMBT4403 UNIT 1 MMBT4403 UNIT 2 100 70 50 30 0.1 hie , INPUT IMPEDANCE (OHMS) 1000 0.2 0.3 0.5 0.7 1.0 2.0 3.0 2k 1k 500 100 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 Figure 10. Current Gain Figure 11. Input Impedance 5.0 7.0 10 500 MMBT4403 UNIT 1 MMBT4403 UNIT 2 2.0 1.0 0.5 0.2 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 hoe, OUTPUT ADMITTANCE ( mhos) hre , VOLTAGE FEEDBACK RATIO (X 10- 4 ) 5k IC, COLLECTOR CURRENT (mAdc) 5.0 01-Jun-2004 Rev. B 10 k IC, COLLECTOR CURRENT (mAdc) 10 http://www.SeCoSGmbH.com 20 k 200 20 0.1 0.1 MMBT4403 UNIT 1 MMBT4403 UNIT 2 100 50 20 MMBT4403 UNIT 1 MMBT4403 UNIT 2 10 5.0 2.0 1.00.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 12. Voltage Feedback Ratio Figure 13. Output Admittance 5.0 7.0 10 Any changing of specification will not be informed individual Page 3 of 4 MMBT4403 PNP Silicon Switching Transistor Elektronische Bauelemente STATIC CHARACTERISTICS h FE, NORMALIZED CURRENT GAIN 3.0 VCE = 1.0 V VCE = 10 V 2.0 TJ = 125°C 25°C 1.0 −55 °C 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 70 50 100 200 300 500 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 14. DC Current Gain 1.0 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 Figure 15. Collector Saturation Region 0.5 TJ = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(sat) @ VCE = 10 V 0 COEFFICIENT (mV/ °C) VOLTAGE (VOLTS) 1.0 0.4 0.2 VC for VCE(sat) 0.5 1.0 1.5 VS for VBE 2.0 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 16. “On” Voltages http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B 500 2.5 0.1 0.2 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 Figure 17. Temperature Coefficients Any changing of specification will not be informed individual Page 4 of 4