SECOS BCP669A

BCP669A
1 W, 1.5 A, 180 V
NPN Epitaxial Planar Transistor
Elektronische Bauelemente
RoHS Compliant Product
SOT-89
A suffix of “-C” specifies halogen & lead-free
FEATURE
4
The BCP669A is designed for low frequency power amplifier.
1
2
3
A
E
C
B
D
F
G
H
K
J
REF.
A
B
C
D
E
F
L
Millimeter
Min.
Max.
4.40
4.60
3.94
4.25
1.40
1.60
2.30
2.60
1.50
1.70
0.89
1.20
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.40
0.58
1.50 TYP
3.00 TYP
0.32
0.52
0.35
0.44
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
VCBO
180
V
Collector to Emitter Voltage
VCEO
160
V
Emitter to Base Voltage
VEBO
5
V
DC Collector Current
IC
1.5
A
Pulse Collector Current
IC
3
A
Collector Power Dissipation
Junction, Storage Temperature
PD
1
W
TJ, TSTG
150, -55~150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
SYMBOL
MIN
TYP
MAX
UNIT
Collector to Base Breakdown Voltage
PARAMETER
BVCBO
180
-
-
V
IC=1mA, IE = 0A
Collector to Emitter Breakdown Voltage
BVCEO
160
-
-
V
IC=10mA, IB = 0A
Emitter to Base Breakdown Voltage
BVEBO
5
-
-
V
IE=1mA, IC = 0A
ICBO
-
-
10
µA
VCB=160 V, IE = 0 A
Collector to Emitter Saturation Voltage
VCE(sat)
-
-
1
V
IC=600mA, IB=50mA
Base to Emitter Saturation Voltage
VBE(on)
-
-
1.5
V
VCE=5V, IC=150mA
DC Current Gain
hFE1
60
-
200
VCE=5V, IC=150mA
DC Current Gain
hFE2
30
-
-
VCE=5V, IC=500mA
fT
-
140
-
MHz
Cob
-
14
-
pF
Collector Cut-Off Current
Transition Frequency
Collector Output Capacitance
TEST CONDITION
VCE = 5V, IC = 10mA, f = 100 MHz
VCB = 10V, f=1MHz
* Pulse Test: Pulse Width≦380µs, Duty Cycle≦2%
CLASSIFICATION OF hFE
http://www.SeCoSGmbH.com/
12-Feb-2010 Rev. B
Rank
B
C
hFE1
60~120
100~200
Any changes of specification will not be informed individually.
Page 1 of 2
BCP669A
Elektronische Bauelemente
1 W, 1.5 A, 180 V
NPN Epitaxial Planar Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
12-Feb-2010 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 2