BCP669A 1 W, 1.5 A, 180 V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 A suffix of “-C” specifies halogen & lead-free FEATURE 4 The BCP669A is designed for low frequency power amplifier. 1 2 3 A E C B D F G H K J REF. A B C D E F L Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.30 2.60 1.50 1.70 0.89 1.20 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 180 V Collector to Emitter Voltage VCEO 160 V Emitter to Base Voltage VEBO 5 V DC Collector Current IC 1.5 A Pulse Collector Current IC 3 A Collector Power Dissipation Junction, Storage Temperature PD 1 W TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) SYMBOL MIN TYP MAX UNIT Collector to Base Breakdown Voltage PARAMETER BVCBO 180 - - V IC=1mA, IE = 0A Collector to Emitter Breakdown Voltage BVCEO 160 - - V IC=10mA, IB = 0A Emitter to Base Breakdown Voltage BVEBO 5 - - V IE=1mA, IC = 0A ICBO - - 10 µA VCB=160 V, IE = 0 A Collector to Emitter Saturation Voltage VCE(sat) - - 1 V IC=600mA, IB=50mA Base to Emitter Saturation Voltage VBE(on) - - 1.5 V VCE=5V, IC=150mA DC Current Gain hFE1 60 - 200 VCE=5V, IC=150mA DC Current Gain hFE2 30 - - VCE=5V, IC=500mA fT - 140 - MHz Cob - 14 - pF Collector Cut-Off Current Transition Frequency Collector Output Capacitance TEST CONDITION VCE = 5V, IC = 10mA, f = 100 MHz VCB = 10V, f=1MHz * Pulse Test: Pulse Width≦380µs, Duty Cycle≦2% CLASSIFICATION OF hFE http://www.SeCoSGmbH.com/ 12-Feb-2010 Rev. B Rank B C hFE1 60~120 100~200 Any changes of specification will not be informed individually. Page 1 of 2 BCP669A Elektronische Bauelemente 1 W, 1.5 A, 180 V NPN Epitaxial Planar Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 12-Feb-2010 Rev. B Any changes of specification will not be informed individually. Page 2 of 2