MMBT4401W NPN Silicon Switching Transistor Elektronische Bauelemente RoHS Compliant Product A SOT-323 L Dim COLLECTOR 3 B S Top View 3 1 BASE V G 1 2 EMITTER 2 C H D J K MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage VCBO 60 Vdc Emitter – Base Voltage VEBO 6.0 Vdc IC 600 mAdc Collector Current — Continuous Min Max A 1.800 2.200 B 1.150 1.350 C 0.800 1.000 D 0.300 0.400 G 1.200 1.400 H 0.000 0.100 J 0.100 0.250 K 0.350 0.500 L 0.590 0.720 S 2.000 2.400 V 0.280 0.420 All Dimension in mm THERMAL CHARACTERISTICS Symbol Max Unit Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Characteristic PD 200 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W PD 200 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg – 55 to +150 °C Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING MMBT4401W = K3X, 2X ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 40 — 60 — 6.0 — — 0.1 — 0.1 Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO Collector – Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO Emitter – Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) IBEV Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ICEX Vdc Vdc Vdc µAdc µAdc 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 5 MMBT4401W NPN Silicon Switching Transistor Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 20 40 80 100 40 — — — 300 — — — 0.4 0.75 0.75 — 0.95 1.2 250 — — 6.5 — 30 1.0 15 0.1 8.0 40 500 1.0 30 Unit ON CHARACTERISTICS(3) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) hFE Collector – Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base – Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) — Vdc Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) fT Collector–Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre Small – Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe MHz pF pF kΩ X 10– 4 — mmhos SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width ((VCC = 30 Vdc,, VEB = 2.0 Vdc,, IC = 150 mAdc, IB1 = 15 mAdc) td — 15 tr — 20 ((VCC = 30 Vdc,, IC = 150 mAdc,, IB1 = IB2 = 15 mAdc) ts — 225 tf — 30 v 300 ms, Duty Cycle v 2.0%. ns ns SWITCHING TIME EQUIVALENT TEST CIRCUITS + 30 V + 30 V 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% +16 V 0 – 2.0 V 200 Ω +16 V 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% 200 Ω 0 1.0 kΩ < 2.0 ns CS* < 10 pF 1.0 kΩ –14 V < 20 ns CS* < 10 pF – 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn–On Time http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Figure 2. Turn–Off Time Any changing of specification will not be informed individual Page 2 of 5 MMBT4401W NPN Silicon Switching Transistor Elektronische Bauelemente TRANSIENT CHARACTERISTICS 25°C 100°C 10 7.0 5.0 30 10 7.0 5.0 QT 2.0 1.0 0.7 0.5 0.3 0.2 Ccb 3.0 2.0 0.1 VCC = 30 V IC/IB = 10 3.0 Cobo Q, Charge (nC) Capacitance (pF) 20 QA 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 10 20 50 30 70 100 Reverse Voltage (V) IC, Collector Current (mA) Figure 3. Capacitances Figure 4. Charge Data IC/IB = 10 70 500 VCC = 30 V IC/IB = 10 70 tr 50 50 tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0 30 20 t, Time (ns) t, Time (ns) 300 100 100 30 tf 20 10 10 7.0 7.0 5.0 5.0 10 20 30 50 70 200 100 300 500 10 20 30 50 70 100 200 IC, Collector Current (mA) IC, Collector Current (mA) Figure 5. Turn–On Time Figure 6. Rise and Fall Times 300 300 500 100 ts′ = ts – 1/8 tf IB1 = IB2 IC/IB = 10 to 20 VCC = 30 V IB1 = IB2 70 50 tf', Fall Time (ns) 200 t s ', Storage Time (ns) 200 100 70 IC/IB = 20 30 20 IC/IB = 10 10 50 7.0 30 5.0 10 20 http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 30 50 70 100 200 300 500 10 20 30 50 70 100 IC, Collector Current (mA) IC, Collector Current (mA) Figure 7. Storage Time Figure 8. Fall Time 200 300 500 Any changing of specification will not be informed individual Page 3 of 5 MMBT4401W NPN Silicon Switching Transistor Elektronische Bauelemente SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25°C Bandwidth = 1.0 Hz 10 IC = 1.0 mA, RS = 150 Ω IC = 500 µA, RS = 200 Ω IC = 100 µA, RS = 2.0 kΩ IC = 50 µA, RS = 4.0 kΩ 8.0 f = 1.0 kHz RS = OPTIMUM RS = SOURCE RS = RESISTANCE NF, Noise Figure (dB) NF, Noise Figure (dB) 10 6.0 4.0 8.0 IC = 50 µA IC = 100 µA IC = 500 µA IC = 1.0 mA 6.0 4.0 2.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0 0.5 1.0 2.0 5.0 10 20 50 50 100 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k f, Frequency (kHz) RS, Source Resistance (OHMS) Figure 9. Frequency Effects Figure 10. Source Resistance Effects h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C This group of graphs illustrates the relationship between selected from the MMBT4401W lines, and the same units hfe and other “h” parameters for this series of transistors. To were used to develop the correspondingly numbered curves obtain these curves, a high–gain and a low–gain unit were on each graph. 300 hfe, Current Gain 200 100 MMBT4401W UNIT 1 MMBT4401W UNIT 2 70 50 30 20 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 hje, Input Impedance (OHMS) 50 k 2.0 k 1.0 k 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 Figure 11. Current Gain Figure 12. Input Impedance 5.0 7.0 10 100 MMBT4401W UNIT 1 MMBT4401W UNIT 2 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 hoe, Output Admittance (µ mhos) hre, Voltage Feedback Ratio (X 10-4) 5.0 k IC, Collector Current (mA) 10 50 20 10 MMBT4401W UNIT 1 MMBT4401W UNIT 2 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, Collector Current (mA) IC, Collector Current (mA) Figure 13. Voltage Feedback Ratio Figure 14. Output Admittance http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 10 k IC, Collector Current (mA) 7.0 5.0 0.2 0.1 20 k 500 5.0 7.0 10 MMBT4401W UNIT 1 MMBT4401W UNIT 2 5.0 7.0 10 Any changing of specification will not be informed individual Page 4 of 5 MMBT4401W NPN Silicon Switching Transistor Elektronische Bauelemente STATIC CHARACTERISTICS 3.0 VCE = 1.0 V VCE = 10 V hFE, Normalized Current Gain 2.0 TJ = 125°C 1.0 25°C 0.7 0.5 – 55°C 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 200 100 300 500 IC, Collector Current (mA) Figure 15. DC Current Gain Vce, Collector-Emitter Voltage (V) 1.0 TJ = 25°C 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 IB, Base Current (mA) Figure 16. Collector Saturation Region 1.0 + 0.5 TJ = 25°C VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 10 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0.5 http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 1.0 2.0 5.0 – 0.5 – 1.0 – 1.5 qVB for VBE – 2.0 0 0.1 0.2 qVC for VCE(sat) 0 Coefficient (mV/ ° C) Voltage (V) 0.8 10 20 50 100 200 500 – 2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, Collector Current (mA) IC, Collector Current (mA) Figure 17. “On” Voltages Figure 18. Temperature Coefficients 500 Any changing of specification will not be informed individual Page 5 of 5