MMBT2222Q

MMBT2222Q
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
RoHS Compliant Product
SOT-89
1.BASE
D
2.COLLECTOR
Dimensions In Millimeters
D1
A
Symbol
3.EMITTER
FEATURES
Power dissipation
PCM : 1 W
b1
Ta m b=25
b
e
L
Collector current
Max
Min
Max
A
1.400
1.600
0.055
0.063
b
0.320
0.520
0.013
0.020
b1
0.360
0.560
0.014
0.022
c
0.350
0.440
0.014
0.017
D
4.400
4.600
0.173
0.181
D1
1.400
1.800
0.055
0.071
E
2.300
2.600
0.091
0.102
E1
3.940
4.250
0.155
E
E1
Dimensions In Inches
Min
C
e1
I CM : 0.6 A
1.500TYP
e
0.167
0.060TYP
e1
2.900
3.100
0.114
0.122
L
0.900
1.100
0.035
0.043
Collector-base voltage
V (BR)CBO :
75 V
Operating and storage junction temperature range
T J T stg : -55 to +150
ELECTRICAL
CHARACTERISTICS ˄Tamb=25ć
Parameter
Symbol
unless
Test
otherwise
conditions
Collector-base breakdown voltage
V(BR)CBO
Ic= 10­Aˈ
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
specified˅
MIN
MAX
UNIT
75
V
Ic= 10mAˈ IB=0
40
V
IE=10­Aˈ IC=0
6
V
IE=0
Collector cut-off current
ICBO
VCB=60V ,
IE=0
0. 01
­A
Emitter cut-off current
IEBO
VEB= 3V ,
IC=0
0. 01
­A
hFE(1)
VCE=10V,
IC= 0.1mA
35
hFE(2)
VCE=10V,
IC= 1mA
50
hFE(3)
VCE=10V,
IC= 10mA
75
hFE(4)
VCE=10V,
IC= 150mA
100
hFE(5)
VCE=1V,
hFE(6)
VCE=10V,
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
IC= 500mA
1
V
VCE(sat)
IC=150 mA, IB= 15mA
0.3
V
VBE(sat)
IC=500 mA, IB= 50mA
2.0
V
VBE(sat)
IC=150 mA, IB=15mA
1.2
V
fT
Cob
VCE=20V,
IC= 20mA
f=100MHz
VCB=10V,
I E= 0
f=1MHz
td
VCC=30V, IC=150mA
Rise time
tr
VBE(off)=0.5V,IB1=15mA
Storage time
tS
VCC=30V, IC=150mA
Fall time
tf
IB1= IB2= 15mA
01-Jun-2002 Rev. A
40
IC=500 mA, IB= 50mA
Delay time
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50
VCE(sat)
Transition frequency
Output Capacitance
IC= 150mA
300
0.6
300
MHz
8
pF
10
nS
25
nS
225
nS
60
nS
Any changing of specification will not be informed individual
Page 1 of 4
MMBT2222Q
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
ƔSWITCHING TIME EQUIVALENT TEST CIRCUITS
+ā30 V
+ā30 V
1.0 to 100 μs,
DUTY CYCLE ≈ 2.0%
+16 V
200
+16 V
0
0
-ā2 V
1 kΩ
< 2 ns
1.0 to 100 μs,
DUTY CYCLE ≈ 2.0%
CS* < 10 pF
-14 V
1k
< 20 ns
-ā4 V
Figure 2. Turn–Off Time
1000
700
500
hFE , DC CURRENT GAIN
CS* < 10 pF
1N914
Scope rise time < 4 ns
*Total shunt capacitance of test jig,
connectors, and oscilloscope.
Figure 1. Turn–On Time
200
TJ = 125°C
300
200
25°C
100
70
50
-55°C
30
VCE = 1.0 V
VCE = 10 V
20
10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70
100
200
300
500 700 1.0 k
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. DC Current Gain
1.0
TJ = 25°C
0.8
0.6
IC = 1.0 mA
10 mA
150 mA
500 mA
0.4
0.2
0
0.005
0.01
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1.0
IB, BASE CURRENT (mA)
2.0
3.0
5.0
10
20
30
50
Figure 4. Collector Saturation Region
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01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
MMBT2222Q
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
200
100
70
50
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
30
20
10
7.0
5.0
200
t′s = ts - 1/8 tf
100
70
50
tf
30
20
10
7.0
5.0
3.0
2.0
5.0 7.0
10
200 300
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
500
5.0 7.0 10
20 30
50 70 100
200
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
8.0
6.0
f = 1.0 kHz
8.0
4.0
2.0
0.5 1.0 2.0
5.0 10
20
6.0
4.0
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
Ceb
10
7.0
5.0
Ccb
3.0
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
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20 30
50
f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
f, FREQUENCY (kHz)
20
0.2 0.3
0
50
50 100
30
CAPACITANCE (pF)
IC = 50 μA
100 μA
500 μA
1.0 mA
2.0
0
0.01 0.02 0.05 0.1 0.2
01-Jun-2002 Rev. A
500
10
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
IC = 1.0 mA, RS = 150 Ω
500 μA, RS = 200 Ω
100 μA, RS = 2.0 kΩ
50 μA, RS = 4.0 kΩ
300
Figure 6. Turn–Off Time
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
10
2.0
0.1
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
300
t, TIME (ns)
t, TIME (ns)
500
IC/IB = 10
TJ = 25°C
500
VCE = 20 V
TJ = 25°C
300
200
100
70
50
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70 100
Figure 10. Current–Gain Bandwidth Product
Any changing of specification will not be informed individual
Page 3 of 4
MMBT2222Q
NPN Silicon
Elektronische Bauelemente
General Purpose Transistor
1.0
+0.5
TJ = 25°C
0
VBE(sat) @ IC/IB = 10
0.6
COEFFICIENT (mV/ °C)
V, VOLTAGE (VOLTS)
0.8
1.0 V
VBE(on) @ VCE = 10 V
0.4
0.2
0
RqVC for VCE(sat)
-ā0.5
-ā1.0
-ā1.5
RqVB for VBE
-ā2.0
VCE(sat) @ IC/IB = 10
0.1 0.2
50 100 200
0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltages
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01-Jun-2002 Rev. A
500 1.0 k
-ā2.5
0.1 0.2
0.5
1.0 2.0
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
500
Figure 12. Temperature Coefficients
Any changing of specification will not be informed individual
Page 4 of 4