SMG2390N N-Channel Enhancement Mode Mos.FET 1.1 A, 150 V, RDS(ON) 0.700 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A L 3 3 C B Top View 1 1 K 2 E 2 FEATURES D Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. F REF. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) RDS(on) ( 0.700@VGS= 10V 1.200@VGS= 5.5V 150 A B C D E F ID(A) 1.1 0.8 H G Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a Operating Junction and Storage Temperature Range VDS VGS ID IDM IS PD Tj, Tstg Ratings Maximum 150 ±20 1.1 ±10 1.1 1.30 -55 ~ 150 Unit V V A A A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambient a t ≦ 10 sec Steady State Symbol Typ Max Unit RJA 93 130 110 150 °C / W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 20-Aug-2010 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 SMG2390N N-Channel Enhancement Mode Mos.FET 1.1 A, 150 V, RDS(ON) 0.700 Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Symbol Min. Typ. Max. Unit Test Conditions VGS(th) 1.0 - - V VDS=VGS, ID= 250uA IGSS - - ±100 uA VDS= 0V, VGS= ±8V - - 1 - - 10 10 - - - - 0.700 IDSS ID(on) VDS= 120V, VGS= 0V uA RDS(ON) VDS= 120V, VGS= 0V, TJ= 55°C A VDS = 5V, VGS= 10V VGS= 10V, ID= 1.1A Ω - - 1.200 VGS= 5.5V, ID= 0.8A Forward Transconductance a gfs - 11.3 - S VDS= 10V, ID= 1.1A Diode Forward Voltage a VSD - 0.75 - V IS= 1.6A, VGS= 0V DYNAMIC b Total Gate Charge Qg - 7.0 - Gate-Source Charge Qgs - 1.1 - Gate-Drain Charge Qgd - 2.0 - Turn-on Delay Time Td(on) - 8 - Tr - 24 - Rise Time Turn-off Delay Time Fall Time Td(off) - 35 - Tf - 10 - nC VDS= 10V, VGS= 5.5V, ID= 1.1A nS VDD= 10V, VGEN= 4.5V, RL= 15, ID= 1A Notes a. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. b. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 20-Aug-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 2