2SB1424 PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product D A suffix of "-C" specifies halogen & lead-free D1 A E E1 b1 1.BASE SOT-89 2.COLLECTOR b L 3. EMITTER e1 FEATURES Dimensions In Millimeters Symbol Power dissipation : 600 mW Temp.=25 PCM Collector current : -3 A ICM Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range TJ Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS Parameter C e Tamb=25 Symbol Dimensions In Inches Min Max Min Max A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.360 0.560 0.014 0.022 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 D1 1.400 1.800 0.055 0.071 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 1.500TYP e 0.167 0.060TYP e1 2.900 3.100 0.114 0.122 L 0.900 1.100 0.035 0.043 unless otherwise specified Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-50 A,IE=0 -20 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA,IB=0 -20 V Emitter-base breakdown voltage V(BR)EBO IE=-50 A,IC=0 -6 V Collector cut-off current ICBO VCB=-20V,IE=0 -0.1 A Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 A DC current gain hFE(1) VCE=-2V,IC=-100mA Collector-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) fT 120 IC=-2A,IB=-100mA -0.5 VCE=-2V,IC=-500mA,f=100MHz Cob 390 VCB=-10V,IE=0,f=1MHz V 240 MHz 35 pF CLASSIFICATION OF hFE(1) Rank Range Marking http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Q R 120-270 180-390 AEQ AER Any changing of specification will not be informed individual Page 1 of 2 2SB1424 Elektronische Bauelemente PNP Silicon Medium Power Transistor Electrical characteristic curves http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2