2SA1577 PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A L 3 3 1 1 2 V SOT-323 B S Top View 2 G C : 200 mW Temp.=25 V(BR)CBO : -40 1.800 2.200 1.150 1.350 C 0.800 1.000 0.400 1.200 1.400 H 0.000 0.100 COLLECTOR J 0.100 0.250 3 K 0.350 0.500 K BASE ICM : -500 Collector-base voltage A B 0.300 J 1 Collector current Max D Power dissipation PCM Min G H D FEAT URES Dim mA L 0.590 0.720 S 2.000 2.400 V 0.280 0.420 All Dimension in mm 2 EMITTER V Operating and storage junction temperature range TJ ELECTRICAL Tstg: -55 to +150 o CHARACTERISTICS Tamb=25 C unless otherwise specified Symbol Parameter Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100µ A,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1 mA,IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA,IC=0 -5 V Collector cut-off current ICBO VCB=-20 V,IE=0 -1 µA Emitter cut-off current IEBO VEB=-4 V,IC=0 -1 µA DC current gain hFE(1) VCE=-3 V,IC=-10 mA VCE(sat) Collector-emitter saturation voltage fT Transition frequency Cob Collector output capacitance CLASSIFICATION OF Rank Range Marking http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 82 390 IC=-100 mA,IB=-10 mA VCE=-5 V,IC=-20 mA,f=100MHz VCB=-10 V,IE=0,f=1MHz -0.4 V 200 MHz 7 pF hFE(1) P Q R 82-180 120-270 180-390 HP HQ HR Any changing of specification will not be informed individual Page 1 of 3 2SA1577 PNP Silicon Elektronische Bauelemente General Purpose Transistor Electrical characteristic curves http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 3 2SA1577 PNP Silicon Elektronische Bauelemente http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A General Purpose Transistor Any changing of specification will not be informed individual Page 3 of 3