SSD55N03 55A, 25V, RDS(ON) 6mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The SID55N03 provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. A B FEATURES C D Dynamic dv/dt Rating Simple Drive Requirement Repetitive Avalanche Rated Fast Switching GE K MARKING 55N03 2 M HF N O P J Drain Date Code REF. 1 A B C D E F G H Gate PACKAGE INFORMATION Package MPQ LeaderSize TO-252 2.5K 13’ inch 3 Source Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS ±20 V 55 A 35 A IDM 215 A PD 62.5 W 0.5 W / °C TC=25°C Continuous Drain Current TC=100°C Pulsed Drain Current 1 Total Power Dissipation ID Linear Derating Factor 2 Single Pulse Avalanche Energy EAS 240 mJ Single Pulse Avalanche Current IAS 31 A TJ, TSTG -55~150 °C Operating Junction and Storage Temperature Range Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient RθJA 110 °C / W Maximum Thermal Resistance Junction-Case RθJC 2.0 °C / W http://www.SeCoSGmbH.com/ 16-Jun-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SSD55N03 55A, 25V, RDS(ON) 6mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Typ. Max. Unit 25 - - V VGS=0, ID= 250µA - 0.037 - V/°C Reference to 25°C, ID=1mA VGS(th) 1.0 - 3.0 V VDS=VGS, ID=250µA gfs - 30 - S VDS=10V, ID=28A IGSS - - ±100 nA VGS= ±20V - - 1 µA VDS=25V, VGS=0 - - 25 µA VDS=20V, VGS=0 - 4.5 6 Symbol Min. Teat Conditions Static Dran-Source Breakdown Voltage BVDSS Breakdown Voltage Temperature Coefficient △BVDSS /△TJ Gate-Threshold Voltage Forward Transconductance Gate-Source Leakage Current TJ =25°C Drain-Source Leakage Current IDSS TJ =150°C Static Drain-Source On-Resistance 3 RDS(ON) - 7 9 Qg - 16.8 - Gate-Source Charge Qgs - 6.0 - Gate-Drain (“Miller”) Change Qgd - 4.9 - Td(on) - 15.1 - Tr - 4 - Td(off) - 45.2 - Tf - 7.6 - Input Capacitance CISS - 2326 - Output Capacitance COSS - 331 - Reverse Transfer Capacitance CRSS - 174 - Total Gate Charge 3 Turn-on Delay Time 3 Rise Time Turn-off Delay Time Fall Time VGS=10V, ID=30A mΩ VGS=4.5V, ID=30A nC ID=28A VDS=20V VGS=5V nS VDS=15 V ID=28 A VGS=10V RG=3.3 Ω RD=0.53Ω pF VGS =0 VDS=25 V f =1.0MHz Source-Drain Diode Diode Forward Voltage 3 Continuous Source Current (Body Diode) VSD - - 1.5 V IS=20A, VGS=0, TJ=25°C IS - - 55 A VD=VG=0, VS=1.5V Notes: 1. Pulse width limited by safe operating area. 2. Staring TJ=25°C, V DD=20V, L=0.1mH, RG=25, IAS=10A. 3. Pulse width ≦ 300 µs, duty cycle ≦ 2％. http://www.SeCoSGmbH.com/ 16-Jun-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SSD55N03 Elektronische Bauelemente 55A, 25V, RDS(ON) 6mΩ N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 16-Jun-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SSD55N03 Elektronische Bauelemente 55A, 25V, RDS(ON) 6mΩ N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 16-Jun-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 4