SSD40N04-20D N-Ch Enhancement Mode Power MOSFET 39A, 40V, RDS(ON) 22mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. A B C D FEATURES Low RDS(on) provides higher efficiency and extends battery life. Miniature TO-252 surface mount package saves board space. High power and current handling capability. Low side high current DC-DC Converter applications. GE K M PRODUCT SUMMARY VDS(V) 40 REF. PRODUCT SUMMARY RDS(on) m( 22@VGS= 10V 27@VGS= 4.5V A B C D E F G H ID(A) 39 36 HF N O P J Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58 Drain Gate Source ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a b Continuous Source Current (Diode Conduction) Total Power Dissipation a a Operating Junction and Storage Temperature Range UNIT VDS 40 V VGS ±20 V ID @TA=25℃ 39 A IDM 40 A IS 30 A PD @TA=25℃ 50 W TJ, TSTG -55 ~ 175 °C THERMAL RESISTANCE RATINGS Maximum Thermal Resistance Junction-Ambient a RθJA 50 °C / W Maximum Thermal Resistance Junction-Case RθJC 3.0 °C / W Notes： a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 24-Sep-2010 Rev.C Any changes of specification will not be informed individually. Page 1 of 4 SSD40N04-20D N-Ch Enhancement Mode Power MOSFET 39A, 40V, RDS(ON) 22mΩ Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Static Gate-Threshold Voltage VGS(th) 1.0 - - V VDS= VGS, ID = 250 μA Gate-Body Leakage IGSS - - ±100 nA VDS = 0V, VGS= 20V Zero Gate Voltage Drain Current IDSS - - 1 - - 25 On-State Drain Current a ID(on) 34 - - - - 22 - - 27 μA A VDS= 24V, VGS= 0V VDS= 24V, VGS= 0V, TJ=55°C VDS = 5V, VGS= 10V VGS= 10V, ID= 39 A Drain-Source On-Resistance a RDS(ON) Forward Transconductance a gfs - 22 - S VDS= 15V, ID= 39 A Diode Forward Voltage VSD - 1.1 - V IS= 34 A, VGS= 0 V Pulsed Sourcea Current (Body Diode) ISM - 5 - A Total Gate Charge Qg - 20 - Gate-Source Charge Qgs - 7 - Gate-Drain Charge Qgd - 7 - Input Capacitance Ciss - 1317 - Output Capacitance Coss - 272 - Turn-on Delay Time Td(on) - 16 - Tr - 5 - Td(off) - 23 - Tf - 3 - Rise Time Turn-off Delay Time Fall Time mΩ VGS= 4.5V, ID= 36 A Dynamic b nC VDS = 15 V VGS = 4.5 V ID = 39 A pF VDS = 15 V VGS = 0 V f = 1MHz nS VDD= 25 V ID= 34 A VGEN = 10 V RL= 25 Notes a. Pulse test：Pulse width ≦ 300 μs, duty cycle ≦ 2％. b. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 24-Sep-2010 Rev.C Any changes of specification will not be informed individually. Page 2 of 4 SSD40N04-20D Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 39A, 40V, RDS(ON) 22mΩ CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 24-Sep-2010 Rev.C Any changes of specification will not be informed individually. Page 3 of 4 SSD40N04-20D Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 39A, 40V, RDS(ON) 22mΩ CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 24-Sep-2010 Rev.C Any changes of specification will not be informed individually. Page 4 of 4