SSF84W -0.13A , -50V , RDS(ON) 10Ω P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-323 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. A L 3 3 C B Top View 1 1 FEATURES K Energy Efficient Miniature SOT–323 Surface Mount Package Saves Board Space 2 E 2 D F G APPLICATION REF. DC-DC converters, load switching, power management in portable and battery–powered products such as computers, printers, cellular and cordless telephones. A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 MARKING PD W H J Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. REF. G H J K L 2 Drain W： ：Date Code 1 Gate PACKAGE INFORMATION Package MPQ Leader Size SOT-323 3K 7 inch 3 Source THERMAL CHARACTERISTICS Symbol Parameter Total Device Dissipation FR–5 Board Maximum Junction–Ambient Junction & Storage Temperature http://www.SeCoSGmbH.com/ 04-Nov-2011 Rev. A Unit 225 mW 1.8 mW / °C 556 °C / W 300 mW 2.4 mW / °C RθJA 417 °C / W TJ, TSTG -55 ~ 150 °C TA=25°C PD Derate above 25°C Maximum Junction–Ambient Total Device Dissipation Alumina Substrate Rating RθJA TA=25°C Derate above 25°C PD Any changes of specification will not be informed individually. Page 1 of 4 SSF84W -0.13A , -50V , RDS(ON) 10Ω P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente MAXIMUM RATINGS (TJ=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain – Source Voltage VDS -50 V Gate – Source Voltage - Continuous VGS ±20 V TA=25°C ID -130 Pulsed Drain Current (tp≤10µs) IDM -520 PD 225 mW TL 260 °C RθJA 556 °C / W TJ, TSTG -55 ~ 150 °C Continuous Drain Current mA Total Power Dissipation TA=25°C Maximum Lead Temperature for Soldering Purposes, for 10 seconds Maximum Junction–Ambient Operating Junction & Storage Temperature Range ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions OFF Characteristics Drain-Source Breakdown Voltage Gate-Source Leakage Current Drain-Source Leakage Current V(BR)DSS -50 - - V VGS=0, ID = -250µA IGSS - - ±60 µA VGS= ±20V, VDS=0 - - -0.1 - - -15 - - IDSS ON Characteristics Gate Threshold Voltage Transfer Admittance Drain-Source On Resistance VDS= -25V, VGS=0 µA -60 VDS= -50V, VGS=0 VDS = -50V, VGS=0, TJ =125°C 1 VGS(TH) -0.8 - -2 V VDS=VGS, ID = -1mA |yfs| 50 - - mS VDS= -25V, ID= -100mA, f=1kHz RDS(ON) - 5 10 Ω VGS= -5V, ID= -100mA nS VDD= -15V ID= -2.5A RL=50Ω Dynamic Characteristics Turn-on Delay Time Td(on) - 2.5 - Tr - 1 - Td(off) - 16 - Fall Time Tf - 8 - Gate Charge QT - 6000 - Input Capacitance Ciss - 30 - Output Capacitance Coss - 10 - Reverse Transfer Capacitance Crss - 5 - Rise Time Turn-off Delay Time pC VDS= -5V pF VDS= -5V VDG= -5V Source-Drain Diode Continuous Current IS - - -0.130 Pulsed Current ISM - - -0.520 VSD - -2.5 - Forward On Voltage 2 A V Notes: 1. Pulse Test: Pulse Width ≦ 300 µs, Duty cycle ≦ 2% 2. Switching characteristics are independent of operating junction temperature. http://www.SeCoSGmbH.com/ 04-Nov-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SSF84W Elektronische Bauelemente -0.13A , -50V , RDS(ON) 10Ω P-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 04-Nov-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SSF84W Elektronische Bauelemente -0.13A , -50V , RDS(ON) 10Ω P-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 04-Nov-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 4