SSPR42P03 -42A , -30V , RDS(ON) 15 mΩ Ω P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SPR-8PP The SSPR42P03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SPR-8PP package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING 42P03 REF. A B C D E F = Date code Millimeter Min. Max. 3.25 3.40 3.05 3.25 3.20 3.40 3.00 3.20 0.65 BSC. 2.40 2.60 REF. G H I J K L Millimeter Min. Max. 1.35 1.55 0.24 0.35 1.13 REF. 0.30 0.50 0.10 0.20 0.70 0.90 PACKAGE INFORMATION Package MPQ Leader Size SPR-8PP 3K 13 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V 1 Continuous Drain Current @VGS=10V Pulsed Drain Current TC=25°C TC=100°C 2 Single Pulse Avalanche Energy 3 Avalanche Current Power Dissipation 4 TC=25°C Operating Junction & Storage Temperature ID -42 -27 A IDM -130 A EAS 264 mJ IAS -42 A PD 37 W TJ, TSTG -55~150 °C RθJA 75 °C / W RθJC 3.38 °C / W Thermal Resistance Rating 1 Thermal Resistance Junction-Ambient (Max). 1 Thermal Resistance Junction-Case (Max). http://www.SeCoSGmbH.com/ 20-May-2014 Rev.A Any changes of specification will not be informed individually. Page 1 of 4 SSPR42P03 -42A , -30V , RDS(ON) 15 mΩ Ω P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BVDSS -30 - - V VGS=0, ID= -250uA Gate-Threshold Voltage VGS(th) -1 - -2.5 V VDS=VGS, ID= -250uA Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±20V Drain-Source Leakage Current IDSS - - -1 - - -5 - - 15 - - 25 Static Drain-Source On-Resistance 2 RDS(ON) VGS= -4.5V, ID= -15A nS VDD= -15V ID= -15A VGS= -10V RG=3.3Ω pF VGS =0 VDS= -15V f =1.0MHz - mJ VDD= -25V, L=0.1mH, IAS= -21A 18 Total Gate Charge Qg - 22 - Gate-Source Charge Qgs - 8.7 - Gate-Drain (“Miller”) Change Qgd - 7.2 - Td(on) - 8 - Tr - 73.7 - Td(off) - 61.8 - Tf - 24.4 - Input Capacitance Ciss - 2215 - Output Capacitance Coss - 310 - Reverse Transfer Capacitance Crss - 237 - Fall Time VGS= -10V, ID= -30A ID= -15A VDS= -15V VGS= -4.5V 9 Turn-off Delay Time mΩ nC - Rise Time VDS= -24V, VGS=0, TJ=55°C f =1.0MHz Rg Turn-on Delay Time VDS= -24V, VGS=0, TJ=25°C Ω Gate Resistance 2 uA Guaranteed Avalanche Characteristics Single Pulse Avalanche Energy 5 EAS 66 - Source-Drain Diode Diode Forward Voltage 2 VSD - - -1 V IS - - -42 A ISM - - -130 A Reverse Recovery Time Trr - 19 - nS Reverse Recovery Charge Qrr - 9 - nC Continuous Source Current Pulsed Source Current 2,6 1,6 IS= -1A, VGS=0, TJ=25°C VD=VG=0, Force Current IF= -15A, dl/dt=100A/µS, TJ=25°C Note: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper , ≦10sec , 125℃/W at steady state 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3. The EAS data shows Max. rating . The test condition is VDD= -25V,VGS= -10V,L=0.1mH,IAS= -42A 4. The power dissipation is limited by 150°C juncti on temperature 5. The Min. value is 100% EAS tested guarantee. 6. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. http://www.SeCoSGmbH.com/ 20-May-2014 Rev.A Any changes of specification will not be informed individually. Page 2 of 4 SSPR42P03 Elektronische Bauelemente -42A , -30V , RDS(ON) 15 mΩ Ω P-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 20-May-2014 Rev.A Any changes of specification will not be informed individually. Page 3 of 4 SSPR42P03 Elektronische Bauelemente -42A , -30V , RDS(ON) 15 mΩ Ω P-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 20-May-2014 Rev.A Any changes of specification will not be informed individually. Page 4 of 4