SMS3400A 5.8A , 30V , RDS(ON) 32 m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-23 The SMS3400A provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. A L 3 3 C B Top View 1 1 2 K E 2 D FEATURES F Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic G Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 REF. A B C D E F MARKING H REF. G H J K L J Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 R0A Top View PACKAGE INFORMATION Package MPQ Leader Size SOT-23 3K 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 Maximum Power Dissipation 1 Thermal Resistance Junction-Ambient 2 Operating Junction & Storage Temperature http://www.SeCoSGmbH.com/ 22-May-2015 Rev.D Symbol Rating Unit VDS 30 V VGS ±12 V ID 5.8 A IDM 30 A PD 400 mW RθJA 313 °C / W TJ, TSTG 150, -55~150 °C Any changes of specification will not be informed individually. Page 1 of 4 SMS3400A 5.8A , 30V , RDS(ON) 32 m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID=250μA Gate-Threshold Voltage 3 VGS(th) 0.7 - 1.4 V VDS=VGS, ID=250μA Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±12V, VDS=0 Drain-Source Leakage Current IDSS - - 1 μA VDS=24V, VGS=0 Forward Transconductance 3 gfs 8 - - S VDS=5V, ID=5A Diode Forward Voltage 3 VSD - - 1 V IS=1A, VGS=0 - - 32 - - 38 - - 45 Static Drain-Source On-Resistance 3 RDS(ON) VDS=10V, ID=5.8A mΩ VGS=4.5V, ID=5A VGS=2.5V, ID=4A Switching Parameters Total Gate Charge Qg - 9.5 - Gate-Source Charge Qgs - 1.5 - Gate-Drain Change Qgd - 3 - Input Capacitance Ciss - 1155 - Output Capacitance Coss - 108 - Reverse Transfer Capacitance Crss - 84 - Turn-on Delay Time Td(on) - 5 - Tr - 7 - Td(off) - 40 - Fall Time Tf - 6 - Gate Resistance Rg - - 3.6 Rise Time Turn-off Delay Time nC ID=5.8A VDS=15V VGS=4.5V pF VGS =0 VDS=15V f =1.0MHz nS VDS=15V VGS=10V RGEN=3Ω RL=2.7Ω Ω VGS= VDS=0, f =1.0MHz Note: 1. Pulse width limited by maximum junction temperature. 2 2. Surface Mounted on FR4 Board, When Mounted on 1 inch FR4 Board, t < 5 sec , RθJA=89°C / W 3. Pulse Width≤300µs, Duty Cycle ≤ 2%. http://www.SeCoSGmbH.com/ 22-May-2015 Rev.D Any changes of specification will not be informed individually. Page 2 of 4 SMS3400A Elektronische Bauelemente 5.8A , 30V , RDS(ON) 32 m N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 22-May-2015 Rev.D Any changes of specification will not be informed individually. Page 3 of 4 SMS3400A Elektronische Bauelemente 5.8A , 30V , RDS(ON) 32 m N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 22-May-2015 Rev.D Any changes of specification will not be informed individually. Page 4 of 4