SPR1084N03 108A , 30V , RDS(ON) 4.0 mΩ Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION PR-8PP The SPR1084N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PR-8PP package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING 1084N03 REF. = Date code A B C D E F Millimeter Min. Max. 4.9 5.1 5.7 5.9 5.95 6.2 1.27 BSC. 0.35 0.49 0.1 0.2 REF. G H I J K L Millimeter Min. Max. 0.8 1.0 0.254 Ref. 4.0 Ref. 3.4 Ref. 0.6 Ref. 1.4 Ref. PACKAGE INFORMATION Package MPQ Leader Size PR-8PP 3K 13 inch S D S D S D G D ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V 1 Continuous Drain Current @VGS=10V Pulsed Drain Current 2 TC=25°C TC=100°C TC=25°C Single Pulse Avalanche Energy 3 Avalanche Current Total Power Dissipation 4 TC=25°C Operating Junction & Storage Temperature ID 108 68 A I DM 216 A EAS 317 mJ IAS 53.8 A PD 69 W TJ, TSTG -55~150 °C RθJA 36 °C / W RθJC 1.8 °C / W Thermal Resistance Rating 1 Thermal Resistance Junction-Ambient (Max). 1 Thermal Resistance Junction-Case (Max). http://www.SeCoSGmbH.com/ 16-May-2014 Rev.A Any changes of specification will not be informed individually. Page 1 of 4 SPR1084N03 108A , 30V , RDS(ON) 4.0 mΩ Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID= 250µA Gate-Threshold Voltage VGS(th) 1.0 - 2.5 V VDS=VGS, ID=250µA gfs - 26.5 - S VDS=5V, ID=30A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±20V Drain-Source Leakage Current IDSS - - 1 - - 5 - 3.4 4 - 5.2 6 Forward Tranconductance Static Drain-Source On-Resistance 2 RDS(ON) VGS=4.5V, ID=15A nS VDD=15V ID=20A VGS=10V RG=1.5Ω pF VGS =0 VDS=15V f =1.0MHz - mJ VDD=25V, L=0.1mH, IAS=30A 2.8 Total Gate Charge Qg - 31.6 - Gate-Source Charge Qgs - 6.07 - Gate-Drain (“Miller”) Change Qgd - 13.8 - Td(on) - 11.2 - Tr - 49 - Td(off) - 35 - Tf - 7.8 - Input Capacitance Ciss - 3075 - Output Capacitance Coss - 400 - Reverse Transfer Capacitance Crss - 315 - Fall Time VGS=10V, ID=30A ID=12A VDS=20V VGS=4.5V 1.4 Turn-off Delay Time mΩ nC - Rise Time VDS=24V, VGS=0, TJ=55°C f =1.0MHz Rg Turn-on Delay Time VDS=24V, VGS=0, TJ=25°C Ω Gate Resistance 2 µA Guaranteed Avalanche Characteristics Single Pulse Avalanche Energy 5 EAS 98 - Source-Drain Diode Diode Forward Voltage 2 Continuous Source Current Pulsed Source Current 2,6 1,6 VSD - - 1 V IS - - 108 A ISM - - 216 A IS=1A, VGS=0V VG=VD=0, Force Current Note: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper , ≦10sec , 125℃/W at steady state 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3. The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=53.8A 4. The power dissipation is limited by 150°C juncti on temperature 5. The Min. value is 100% EAS tested guarantee. 6. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. http://www.SeCoSGmbH.com/ 16-May-2014 Rev.A Any changes of specification will not be informed individually. Page 2 of 4 SPR1084N03 Elektronische Bauelemente 108A , 30V , RDS(ON) 4.0 mΩ Ω N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 16-May-2014 Rev.A Any changes of specification will not be informed individually. Page 3 of 4 SPR1084N03 Elektronische Bauelemente 108A , 30V , RDS(ON) 4.0 mΩ Ω N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 16-May-2014 Rev.A Any changes of specification will not be informed individually. Page 4 of 4