SSM2625

SSM2625
0.9A , 250V , RDS(ON) 1.7 
N-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SOT-223
The SSM2625 provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SOT-223 package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
A
M
4
CB
Top View
1
2
K
E
FEATURES



Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
D
F
MARKING
2625

3
L
G
REF.
A
B
C
D
E
F
 = Date code
H
Millimeter
Min.
Max.
5.90
6.70
6.70
7.30
3.30
3.80
1.42
1.90
4.45
4.75
0.60
0.85
J
REF.
G
H
J
K
L
M
Millimeter
Min.
Max.
0.18
2.00 REF.
0.20
0.40
1.10 REF.
2.30 REF.
2.80
3.20
D
PACKAGE INFORMATION

Package
MPQ
Leader Size
SOT-223
2.5K
13 inch

G

S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
250
V
Gate-Source Voltage
VGS
±20
V
0.9
A
0.7
A
IDM
3.6
A
PD
2.2
W
TJ, TSTG
-65~150
°C
57
°C / W
Continuous Drain Current 1@VGS=10V
Pulsed Drain Current
Power Dissipation
TA=25°C
TA=70°C
2
3
TA=25°C
Operating Junction & Storage Temperature
ID
Thermal Resistance Rating
1
Thermal Resistance Junction-Ambient (Max).
http://www.SeCoSGmbH.com/
22-Apr-2014 Rev.B
RθJA
Any changes of specification will not be informed individually.
Page 1 of 4
SSM2625
0.9A , 250V , RDS(ON) 1.7 
N-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
BVDSS
250
-
-
V
VGS=0, ID= 250μA
Gate-Threshold Voltage
VGS(th)
1.5
-
3.5
V
VDS=VGS, ID=250μA
Gate-Source Leakage Current
IGSS
-
-
±100
nA
VGS= ±20V
Drain-Source Leakage Current
IDSS
-
-
1
μA
VDS=250V, VGS=0
-
1.4
1.7
-
1.45
1.9
Static Drain-Source On-Resistance 2
RDS(ON)
Ω
VGS=10V, ID=0.9A
VGS=4.5V, ID=0.9A
Diode Forward Voltage 2
VSD
-
0.8
1.2
V
Total Gate Charge
Qg
-
30
-
nC
ID=1.5A, VDS=200V
VGS=10V
Total Gate Charge
Qg
-
17
-
Gate-Source Charge
Qgs
-
3
-
nC
Gate-Drain (‘‘Miller’’) Change
Qgd
-
12
-
ID=1.5A
VDS=200V
VGS=4.5V
Td(on)
-
19
-
Tr
-
4
-
nS
Td(off)
-
48
-
VDD=125V
VGS=10V
RG=6Ω
RL=125Ω
Tf
-
13
-
Input Capacitance
Ciss
-
1170
-
Output Capacitance
Coss
-
36
-
pF
VGS =0
VDS=15V
f =1.0MHz
Reverse Transfer Capacitance
Crss
-
10
-
Turn-on Delay Time 2
Rise Time
Turn-off Delay Time
Fall Time
Note:
1.
2.
3.
4.
IS=0.9A, VGS=0, TJ=25°C
The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
The data tested by pulsed , pulse width ≦ 300μs , duty cycle ≦ 2%
The power dissipation is limited by 150°C, junction temperature.
The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
http://www.SeCoSGmbH.com/
22-Apr-2014 Rev.B
Any changes of specification will not be informed individually.
Page 2 of 4
SSM2625
Elektronische Bauelemente
0.9A , 250V , RDS(ON) 1.7 
N-Channel Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
22-Apr-2014 Rev.B
Any changes of specification will not be informed individually.
Page 3 of 4
SSM2625
Elektronische Bauelemente
0.9A , 250V , RDS(ON) 1.7 
N-Channel Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
22-Apr-2014 Rev.B
Any changes of specification will not be informed individually.
Page 4 of 4