SMS3401A -4.2A , -30V , RDS(ON) 60 m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-23 The SMS3401A provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. A L 3 3 C B Top View 1 1 2 K E 2 D FEATURES F Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic G REF. A B C D E F MARKING Millimeter Min. Max. 2.70 3.10 2.10 2.65 1.20 1.40 0.89 1.17 1.78 2.04 0.30 0.50 H REF. G H J K L J Millimeter Min. Max. 0.09 0.18 0.35 0.65 0.08 0.20 0.6 REF. 0.95 BSC. R1A PACKAGE INFORMATION Package MPQ Leader Size SOT-23 3K 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 2 Maximum Power Dissipation 1 Thermal Resistance Junction-Ambient 2 Operating Junction & Storage Temperature http://www.SeCoSGmbH.com/ 22-May-2015 Rev.D Symbol Rating Unit VDS -30 V VGS ±12 V ID -4.2 A PD 400 mW RθJA 313 °C / W TJ, TSTG 150, -55~150 °C Any changes of specification will not be informed individually. Page 1 of 4 SMS3401A -4.2A , -30V , RDS(ON) 60 m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage V(BR)DSS -30 - - V VGS=0, ID= -250μA VGS(th) -0.7 - -1.3 V VDS=VGS, ID= -250μA Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±12V, VDS=0 Drain-Source Leakage Current IDSS - - -1 μA VDS= -24V, VGS=0 gfs 7 - - S VDS= -5V, ID= -5A - - 60 - - 70 - - 85 Gate-Threshold Voltage 3 Forward Tranconductance 3 Static Drain-Source On-Resistance 3 RDS(ON) VGS= -10V, ID=-4.2A mΩ VGS= -4.5V, ID= -4A VGS= -2.5V, ID= -1A Dynamic Parameters Input Capacitance Ciss - 1050 - Output Capacitance Coss - 127 - Reverse Transfer Capacitance Crss - 85 - Turn-on Delay Time Td(on) - 6.5 - Tr - 3.5 - Td(off) - 40 - Fall Time Tf - 13 - Total Gate Charge Qg - 9.5 Rise Time Turn-off Delay Time pF VGS =0 VDS= -15V f =1.0MHz nS VGS= -10V VDS= -15V RGEN=6Ω RL=3.6Ω - nC ID= -4A, VDS= -15V VGS= -4.5V -1 V Source-Drain Diode Forward Voltage 3 VSD - - VGS =0, IS= -1A Note: 1. Pulse width limited by maximum junction temperature. 2 2. Surface Mounted on FR4 Board, When Mounted on 1 inch FR4 Board, t < 5 sec, RθJA=100°C / W 3. Pulse Width≤300µs, Duty Cycle ≤ 2%. http://www.SeCoSGmbH.com/ 22-May-2015 Rev.D Any changes of specification will not be informed individually. Page 2 of 4 SMS3401A Elektronische Bauelemente -4.2A , -30V , RDS(ON) 60 m P-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 22-May-2015 Rev.D Any changes of specification will not be informed individually. Page 3 of 4 SMS3401A Elektronische Bauelemente -4.2A , -30V , RDS(ON) 60 m P-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 22-May-2015 Rev.D Any changes of specification will not be informed individually. Page 4 of 4