SSP7150N 3.6A, 150V, RDS(ON) 255 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOP-8PP Low RDS(on) trench technology. Low thermal impedance. Fast switching speed. B D C APPLICATIONS θ White LED boost converters. Automotive Systems. Industrial DC/DC Conversion Circuits. e E A b d g PACKAGE INFORMATION Package MPQ Leader Size SOP-8PP 3K 7’ inch F G REF. A B C D E F G Millimeter Min. Max. 1.00 1.10 5.70 5.80 0.20 0.30 3.61 3.98 5.40 6.10 0.08 0.20 3.60 3.99 REF. θ b d e g Millimeter Min. Max. 0° 12° 0.33 0.51 1.27BSC 1.35 1.75 1.10 - ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ±20 V Continuous Drain Current 1 TA=25°C TA=70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Power Dissipation 1 1 TA=25°C TA=70°C Operating Junction and Storage Temperature Range ID 3.6 2.9 A IDM 20 A IS 6.2 A PD TJ, TSTG 5 3.2 -55~150 W °C Thermal Resistance Data Maximum Junction to Ambient 1 t≦10 sec Steady State RθJA 25 65 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 07-Apr-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SSP7150N 3.6A, 150V, RDS(ON) 255 m N-Channel Enhancement MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Symbol Parameter Min Typ Max Unit Test condition Static VGS(th) 1 - - V VDS=VGS, ID=250μA Gate-Body Leakage IGSS - - ±10 nA VDS=0, VGS= ±20V Zero Gate Voltage Drain Current IDSS - - 1 - - 10 10 - - - - 255 - - 290 gFS - 10 - S VDS=15V,,ID=2.9A VSD - 0.76 - V IS=3.1A, VGS=0 Gate-Threshold Voltage On-State Drain Current 1 ID(ON) Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage RDS(ON) Dynamic Qg - 10.8 - Gate-Source Charge Qgs - 3.3 - Gate-Drain Charge Qgd - 5.6 - Turn-On Delay Time Td(ON) - 10.1 - Tr - 10 - Td(OFF) - 50 - Tf - 22 - Input Capacitance Ciss - 848 - Output Capacitance Coss - 69 - Reverse Transfer Capacitance Crss - 29 - Turn-Off Delay Time Fall Time A mΩ VDS=120V, VGS=0 VDS=120V, VGS=0,TJ=55°C VDS=5V, VGS=10V VGS=10V, ID=2.9A VGS=4.5V, ID=2.7A 2 Total Gate Charge Rise Time μA nC ID=2.9A VDS=75V VGS=4.5V nS ID=2.9A, VDD=75V VGEN=10V RL=25.9Ω, RGEN=6Ω pF VDS=15V, VGS=0, f=1MHz Notes: 1. Pulse test：PW≦300μs duty cycle≦2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 07-Apr-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SSP7150N Elektronische Bauelemente 3.6A, 150V, RDS(ON) 255 m N-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 07-Apr-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SSP7150N Elektronische Bauelemente 3.6A, 150V, RDS(ON) 255 m N-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 07-Apr-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 4