STT3402N 6.3 A, 30 V, RDS(ON) 27 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A E F Low RDS(on) Provides Higher Efficiency and Extends Battery Life. Low Gate Charge. Fast Switch. Miniature TSOP-6 Surface Mount Package Saves Board Space. VDS(V) 30 1 2 3 C REF. A B C D E F ID(A) 6.3 5.5 H J K DG PRODUCT SUMMARY STT3402N RDS(on) (m 0.027@VGS= 10V 0.035@VGS= 4.5V L 4 B TYPICAL APPLICATIONS 5 6 Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. D D D D G S PACKAGE INFORMATION Package MPQ LeaderSize TSOP-6 3K 7’ inch ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED) Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA= 25°C TA= 70°C 1 2 TA= 25°C TA= 70°C Power Dissipation 1 °C Symbol Maximum Unit RJA 78 °C / W ID PD Tj, Tstg Operating Junction and Storage Temperature Range Unit 30 ±20 6.3 5.2 ±20 1.3 1.6 1.0 -55 ~ 150 IDM IS Pulsed Drain Current Continuous Source Current (Diode Conduction) 1 Ratings Maximum V V A A A W THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambient 1 t ≦ 5 sec Notes 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 19-Nov-2010 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 STT3402N 6.3 A, 30 V, RDS(ON) 27 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions SWITCH OFF CHARACTERISTICS Drain-Source Breakdown Voltage V(BR)DSS 30 - - V VGS=0V, ID= 250uA Gate-Body Leakage IGSS - - ±100 nA VDS= 0V, VGS= ±20V - - 1 Zero Gate Voltage Drain Current IDSS uA - - 10 VDS= 24V, VGS= 0V VDS= 24V, VGS= 0V, TJ= 55°C SWITCH ON CHARACTERISTICS Gate-Threshold Voltage VGS(th) 1.0 1.6 3.0 V VDS=VGS, ID= 250uA On-State Drain Current 1 ID(on) 20 - - A VDS = 5V, VGS= 10V - 23 27 - 32 39 - 29 35 Drain-Source On-Resistance 1 RDS(ON) VGS= 10V, ID= 6.3A mΩ VGS= 10V, ID= 6.3A, TJ= 55°C VGS= 4.5V, ID= 5.5A Forward Transconductance 1 gfs - 45 - S VDS= 10V, ID= 6.3A Diode Forward Voltage 1 VSD - 0.75 1.2 V IS= 1.3A, VGS= 0V DYNAMIC b Total Gate Charge Qg - 9 13 Gate-Source Charge Qgs - 2.9 - Gate-Drain Charge Qgd - 3.2 - nC VDS= 15V, VGS= 5V, ID= 6.3A, RL= 6 SWITCHING CHARACTERISTICS Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) - 6 13 Tr - 10 19 Td(off) - 18 30 Tf - 5 13 nS VDS= 15V, VGEN= 10V, RL= 6, ID= 1A, RGEN= 6 Notes 1 Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 19-Nov-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 STT3402N Elektronische Bauelemente 6.3 A, 30 V, RDS(ON) 27 m N-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 19-Nov-2010 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 STT3402N Elektronische Bauelemente 6.3 A, 30 V, RDS(ON) 27 m N-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 19-Nov-2010 Rev. A Any changes of specification will not be informed individually. Page 4 of 4