DUAL MATCHED NPN SILICON TRANSISTOR 2N2060 / 2N2060A • • • • Matched Dual NPN Transistors Low Power Hermetically Sealed TO-77 Metal Package High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCEO VCER VCBO VEBO IC PD TJ Tstg Collector – Emitter Voltage Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Continuous Collector Current 60V 80V 100V 7V 500mA Total Power Dissipation at TA = 25°C Derate Above 25°C TC = 25°C Derate Above 25°C Junction Temperature Range Storage Temperature Range Per Side Total Device 540 mW 600 mW 3.08 mW/°C 3.48 mW/°C 1.5W 2.12W 8.6 mW/°C 12.1 mW/°C -65 to +200°C -65 to +200°C Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8570 Issue 1 Page 1 of 3 DUAL MATCHED NPN SILICON TRANSISTOR 2N2060 / 2N2060A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols Parameters ICBO Collector-Cut-Off Current IEBO Emitter Cut-off Current V(BR)CBO Test Conditions VCB = 80V Min Typ IE = 0 Max 0.002 TA = 150°C 10 VBE = 5V IC = 0 2.0 Collector-Base Breakdown Voltage IC = 100µA IE = 0 100 V(BR)EBO Emitter-Base Breakdown Voltage IE = 100µA IC = 0 7 V(BR)CER(1) IC = 100mA RBE ≤10Ω 80 V(BR)CEO(1) Collector – Emitter Breakdown Voltage Collector – Emitter Breakdown Voltage IC = 30mA IB = 0 60 VBE(sat) Base-Emitter Saturation Voltage IC = 50mA IB = 5mA VCE(sat) Collector - Emitter Saturation Voltage 2N2060A IC = 50mA IB = 5mA 2N2060 IC = 50mA IB = 5mA IC = 10µA VCE = 5V 25 75 IC = 100µA VCE = 5V 30 90 IC = 1.0mA VCE = 5V 40 120 IC = 10mA VCE = 5V 50 150 IC = 50mA VCE = 10V HFE Forward-current transfer ratio Units µA nA V 0.9 0.6 1.2 - DYNAMIC CHARACTERISTICS fT Current Gain Bandwidth Product hfe Small-Signal Current Gain hie(3) Input Impedance 60 MHz f = 20MHz IC = 1.0mA VCE = 5V 50 150 1000 4000 - f = 1.0KHz IC = 1.0mA VCE = 5V f = 1.0KHz hib(3) Input Impedance Cobo Output Capacitance Cibo Input Capacitance IC = 1.0mA Ω VCB = 10V 20 30 f = 1.0KHz VCB = 10V IE = 0 15 pF 85 pF f = 1.0MHz VBE = 0.5V IC = 0 f = 1.0MHz Notes (1) Pulse Width ≤ 300us, δ ≤ 2% (2) The lowest HFE reading is taken as HFE1 for this ratio (3) Parameter by design only Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8570 Issue 1 Page 2 of 3 DUAL MATCHED NPN SILICON TRANSISTOR 2N2060 / 2N2060A MATCHING CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols Parameters Test Conditions HFE1/ HFE2 DC Current Gain Ratio VBE1- VBE2 Base – Emitter Voltage Differential ∆ (VBE1- VBE2 ) ∆T (2) Base –Emitter Voltage Differential Change Due To Temperature Min Typ Max IC = 100µA VCE = 5V 0.9 1.0 IC = 1.0mA VCE = 5V 0.9 1.0 IC = 100µA VCE = 5V 3.0 IC = 1.0mA VCE = 5V 5.0 IC = 1.0mA VCE = 5V 5.0 Units - mV µV/°C TA = -55°C to +125°C MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.335) 9.40 (0.370) 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200) 2.54 (0.100) 4 2.54 (0.100) 3 5 0.74 (0.029) 1.14 (0.045) 6 2 1 45˚ 0.71 (0.028) 0.86 (0.034) TO-77 (MO-002AF) METAL PACKAGE PIN 1 – Collector PIN 2 – Base PIN 3 – Emitter PIN 4 – Emitter PIN 5 – Base PIN 6 – Collector Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8570 Issue 1 Page 3 of 3