SILICON DUAL MATCHED PNP TRANSISTORS 2N3810DCSM • Matched Dual Transistor. • Dual Ceramic Hermetic Package • Suitable For High Gain, Low Noise, Differential Amplifier, Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD TJ Tstg Each Side Total Device -60V -60V -5V -50mA 500mW 600mW(1) 2.86mW/°C 3.43mW/°C -65 to +200°C -65 to +200°C Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current TA = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range THERMAL PROPERTIES (Each Side) Symbols Parameters RθJA Thermal Resistance, Junction To Ambient Min. 1Typ. Max. Units 350 °C/W Notes (1) Total device power dissipation limited by package. Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 2873 Issue 2 Page 1 of 4 SILICON DUAL MATCHED PNP TRANSISTORS 2N3810DCSM ELECTRICAL CHARACTERISTICS (Each Side, TA = 25°C unless otherwise stated) Symbols Parameters Test Conditions V(BR)CBO IC = -10µA IE = 0 -60 IC = -10mA IB = 0 -60 V(BR)EBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage IE = -10µA IC = 0 -5 ICBO Collector-Cut-Off Current VCB = -50V IE = 0 -10 nA TA = 150°C -10 µA IEBO Emitter-Cut-Off Current VEB = -4V IC = 0 -20 nA IC = -10µA VCE = -5V 100 IC = -100µA VCE = -5V 150 TA = -55°C 60 IC = -500µA VCE = -5V 150 450 IC = -1.0mA VCE = -5V 150 450 IC = -10mA VCE = -5V 125 IC = -100µA VCE = -5V -0.7 IC = -100µA IB = -10µA -0.7 IC = -1.0mA IB = = -100µA -0.8 IC = -100µA IB = -10µA -0.2 IC = -1.0mA IB = = -100µA -0.25 (2) V(BR)CEO hFE Forward-current transfer ratio (2) (2) VBE Base-Emitter Voltage VBE(sat) (2) VCE(sat) (2) Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Min. Typ Max. Units V 450 V ELECTRICAL MATCHING CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols Parameters Test Conditions hFE1 hFE2 Forward-current transfer ratio (gain ratio) IC = -100µA (3) Min. VCE = -5V Typ 0.9 VCE = -5V |VBE1-VBE2| |∆(VBE1-VBE2)∆TA| Base-Emitter Voltage Differential Base-Emitter Voltage Differential Change Due To Temperature Max. 1.0 5 IC = -10µA to -10mA VCE = -5V IC = -100µA VCE = -5V IC = -100µA TA1 = 25°C TA2 = -55°C VCE = -5V IC = -100µA TA1 = 25°C TA2 = 125°C Units mV 3 0.8 mV 1.0 Notes Notes (2) Pulse Width ≤ 300us, δ ≤ 2% (3) The lower of the two readings is taken as hFE1 Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 2873 Issue 2 Page 2 of 4 SILICON DUAL MATCHED PNP TRANSISTORS 2N3810DCSM DYNAMIC CHARACTERISTICS Symbols Parameters Test Conditions IC = -500µA |hfe| Small signal forward-current transfer ratio Min. VCE = -5V VCE = -5V 1.0 f = 100MHz Cobo Cibo (4) hie (4) hoe Output Capacitance Input Capacitance IE = 0 hre Voltage Feedback Ratio f = 1.0KHz hfe Small Signal Current Gain 15 VCE = -10V 3 30 KΩ 5 60 µhmos 25 x 10-4 150 f=100Hz BW=20Hz (4) NF Noise Figure VCE = -10V f=1.0KHz IC = -100µA BW=200Hz RG = 3KΩ f=10KHz BW=2KHz Noise Figure (Broadband) 5 pF VEB = -0.5V Input Impedance IC = -1.0mA Units 4 f = 1.0MHz Output Admittance (4) VCB = -5V f = 1.0MHz IC = 0 Max. 1.0 f = 30MHz IC = -1.0mA Typ f=10Hz to 15.7KHz 600 7 3 dB 2.5 3.5 Notes Notes (4) By design only, not a production test. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 2873 Issue 2 Page 3 of 4 SILICON DUAL MATCHED PNP TRANSISTORS 2N3810DCSM MECHANICAL DATA Dimensions in mm (inches) 3 2 1 4 A 6 0.23 rad. (0.009) 5 6.22 ± 0.13 (0.245 ± 0.005) 4.32 ± 0.13 (0.170 ± 0.005) 1.40 ± 0.15 (0.055 ± 0.006) 1.65 ± 0.13 (0.065 ± 0.005) 0.64 ± 0.06 (0.025 ± 0.003) 2.54 ± 0.13 (0.10 ± 0.005) 2.29 ± 0.20 (0.09 ± 0.008) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Underside View Pad 1 – Collector 1 Pad 2 – Base 1 Pad 3 – Base 2 Pad 4 – Collector 2 Pad 5 – Emitter 2 Pad 6 – Emitter 1 Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 2873 Issue 2 Page 4 of 4