QUAD SILICON PLANAR EPITAXIAL PNP TRANSISTORS 2N2907AQCSM • Low Power, High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current TA = 25°C Total Power Dissipation at Derate Above 37.5°C Junction Temperature Range Storage Temperature Range Per Device Total Package -60V -60V -5V -600mA 500mW 2W 3.08mW/°C 12.3mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES (Each Device) Symbols Parameters RθJA Thermal Resistance, Junction To Ambient Min. Typ. Max. Units 325 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8325 Issue 1 Page 1 of 3 QUAD SILICON PLANAR EPITAXIAL PNP TRANSISTORS 2N2907AQCSM ELECTRICAL CHARACTERISTICS (Each Device, TA = 25°C unless otherwise stated) Symbols (1) V(BR)CEO Parameters Test Conditions Collector-Emitter Breakdown Voltage IC = -10mA IB = 0 VCB = -60V IE = 0 -10 µA VCB = -50V IE = 0 -10 nA TA = 150°C -10 µA VEB = -5V IC = 0 -10 µA VEB = -4V IC = 0 -50 nA -50 nA ICBO Collector Cut-Off Current IEBO Emitter Cut-Off Current ICES Collector Cut-Off Current (1) VCE(sat) VBE(sat) hFE (1) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Forward-current transfer ratio Min. Typ Max. -60 VCE = -50V V IC = -150mA IB = -15mA -0.4 IC = -500mA IB = -50mA -1.6 IC = -150mA IB = -15mA IC = -500mA IB = -50mA IC = -0.1mA VCE = -10V 75 IC = -1.0mA VCE = -10V 100 IC = -10mA VCE = -10V 100 TA = -55°C 50 IC = -150mA VCE = -10V 100 IC = -500mA VCE = -10V 50 IC = -20mA VCE = -20V -0.6 Units V -1.3 -2.6 450 300 DYNAMIC CHARACTERISTICS | hfe | Small signal forward-current transfer ratio hfe Small Signal Current Gain Cobo Output Capacitance Cibo Input Capacitance ton Turn-On Time toff Turn-Off Time 2 f = 100MHz IC = -1.0mA VCE = -10V f = 1.0KHz VCB = -10V 100 IE = 0 8 f = 1.0MHz VEB = -2V pF IC = 0 30 f = 1.0MHz IC = -150mA VCC = -30V IB1 = -15mA IC = -150mA VCC = -30V IB1 = - IB2 = -15mA 45 ns 300 Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8325 Issue 1 Page 2 of 3 QUAD SILICON PLANAR EPITAXIAL PNP TRANSISTORS 2N2907AQCSM MECHANICAL DATA Dimensions in mm (inches) 0.30 (0.012) Rad. 4 plcs 8.89 (0.350) 0.65 (0.025) typ. 7.24 (0.285) 1.27 (0.050) typ. 12 13 14 16 15 11 17 10 18 9 1.14 – 0.15 (0.045 – 0.006) 0.23 (0.009) Rad. 18 plcs 1 2 8 7 6 5 4 3 2.54 (0.100) 1.14(0.045) typ 1.40 (0.055) Nom. LCC6 (MO-042AA) Underside View Pad 1 – Base 1 Pad 2 – Emitter 1 Pad 3 – Collector 1 Pad 7 – Collector 2 Pad 8 – Emitter 2 Pad 9 – Base 2 Pad 10 – Base 3 Pad 11 – Emitter 3 Pad 12 – Collector 3 Pad 16 – Collector 4 Pad 17 – Emitter 4 Pad 18 – Base 4 Pads 4, 5, 6, 13, 14, 15 – No Connections Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8325 Issue 1 Page 3 of 3