2N3767SMD05 MECHANICAL DATA Dimensions in mm (inches) 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3 5.72 (.225) 0.76 (0.030) min. 1 2 10.16 (0.400) 3.05 (0.120) 0.127 (0.005) NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS FEATURES • HIGH VOLTAGE 0.127 (0.005) 0.127 (0.005) 16 PLCS 0.50(0.020) 0.50 (0.020) max. 7.26 (0.286) • FAST SWITCHING • CERAMIC SURFACE MOUNT PACKAGE • SCREENING OPTIONS AVAILABLE SMD05 (TO-276AA) Underside View PIN 1 – Base PIN 2 – Collector PIN 3 – Emitter ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IB IC TJ ,TSTG PD Collector– Base Voltage (IE = 0) Collector– Emitter Voltage (IB = 0) Emiiter– Base Voltage (IB = 0) Base Current Collector Current Operating and Storage Junction Temperature Range Total Device Dissipation @ TC = 25°C Derate above 25°C 100V 80V 6V 2A 4A –55 to +150°C 25W 5°C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3781 Issue 3 2N3767SMD05 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS V(BR)CEO ICEX Collector Emitter Breakdown Voltage1 Collector Cutoff Current IC = 100mA IB = 0 VCE = 100V VBE = 1.5V VCE = 70V VBE = 1.5V 80 V 100 µA 1.0 TA = 150°C IEBO Emitter Base Cutoff Current VEB = 6V IC = 0 0.75 ICEO Collector Emitter Cutoff Current VCE = 80V IB = 0 0.7 ICBO Collector Base Cutoff Current VCB = 100V IE = 0 0.1 IC = 50mA VCE = 5V 30 IC = 500mA VCE = 5V 40 IC = 1.0A VCE = 10V 20 mA ON CHARACTERISTICS hFE DC Current Gain 160 VCE(sat) Collector Emitter Saturation Voltage IC = 1.0A IB = 0.1A 2.5 VBE Base Emitter Voltage IC = 1.0A VCE = 10V 1.5 VCE = 10V IC = 500mA — V TRANSIENT CHARACTERISTICS fT Transistion Frequency f = 10MHz COB Common Base Output Capacitance VCB = 10V IC = 0A f = 100KHz hfe Small Signal Current Gain VCE = 10V IC = 100mA f = 1.0kHz 40 10 MHz 50 pF — 1) Pulse test : Pulse Width < 100µs ,Duty Cycle <1% 2) ft is defined as the frequency at which |hfe| extrapolates to untity. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3781 Issue 3