2N3019DCSM DUAL HIGH FREQUENCY NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) 4.32 ± 0.13 (0.170 ± 0.005) 3 2 FEATURES 1.40 ± 0.15 (0.055 ± 0.006) 1.65 ± 0.13 (0.065 ± 0.005) 0.64 ± 0.06 (0.025 ± 0.003) 2.54 ± 0.13 (0.10 ± 0.005) 2.29 ± 0.20 (0.09 ± 0.008) A = 1.27 ± 0.13 (0.05 ± 0.005) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HERMETIC CERAMIC SURFACE MOUNT PACKAGE • CECC SCREENING OPTIONS AVAILABLE • SPACE QUALITY LEVELS AVAILABLE • HIGH SPEED SATURATED SWITCHING LCC2 PACKAGE (MO-041BB) Underside View PAD 1 – Collector 1 PAD 4 – Collector 2 PAD 2 – Base 1 PAD 5 – Emitter 2 PAD 3 – Base 2 PAD 6 – Emitter 1 APPLICATIONS: For high reliablitity general purpose applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD RθJA Tj Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Power Dissipation Derate above 50°C Thermal Resistance Junction to Ambient Max Junction Temperature Storage Temperature Per Side Total Device 140V 80V 7V 1A 350mW 500mW 2.33mW / °C 3.33mW / °C 429°C / W 300°C / W 200°C –55°C to 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5467 Issue 1 2N3019DCSM ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit V(BR)CEO* Collector – Emitter BreakdownVoltage IC = 10mA IB = 0 80 V V(BR)CBO* Collector – Base Breakdown Voltage IC = 100µA IE = 0 140 V V(BR)EBO* Emitter – Base Breakdown Voltage IE = 100µA IC = 0 7 V ICBO Collector Cut-off Current VCB = 90V VBE = 0 10 nA Tamb = 150°C 10 µA IEBO Emitter Cut-off Current 10 nA VCE(sat)* Collector – Emitter Saturation Voltage VBE(sat)* Base – Emitter Saturation Voltage hFE* VEB = 5V DC Current Gain IC = 150mA IB = 15mA 0.20 IC = 500mA IB = 50mA 0.50 IC = 150mA IB = 15mA 1.1 IC = 0.1mA VCE = 10V 50 IC = 10mA VCE = 10V 90 IC = 150mA VCE = 10V 100 Tamb = –55°C 40 IC = 500mA VCE = 10V 50 IC = 1A VCE = 10V 15 300 V — * Pulse test tp = 300µs , δ ≤ 2% DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit fT Transition Frequency IC = 50mA VCE = 10V f = 20MHz CEBO Capacitance VEB = 0.5V IC = 0 f = 1.0MHz 60 pF CCBO Input Capacitance VCB = 10V IE = 0 f = 1.0MHz 12 pF hfe Small Signal Current Gain IC = 1mA VCE = 5V f = 1kHz 400 — NF Noise Figure IC = 100µA VCE = 10V f = 1kHz 4 dB Rg = 1KΩ 100 80 MHz Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5467 Issue 1