2N3634CSM MECHANICAL DATA Dimensions in mm (inches) 0.31 rad. (0.012) 3 2 FEATURES 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) PNP SILICON TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS 1 1.91 ± 0.10 (0.075 ± 0.004) • High Voltage Switching • Low Power Amplifier Applications 0.31 rad. (0.012) 3.05 ± 0.13 (0.12 ± 0.005) A= 1.02 ± 0.10 (0.04 ± 0.004) A 1.40 (0.055) max. • Hermetic Ceramic Surface Mount Package APPLICATIONS LCC1 • General Purpose • High Speed Saturated Switching Underside View PAD 1 – Base PAD 2 – Emitter PAD 3 – Collector • Screening Options Available ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCEO VCBO VEBO IC PD PD TJ , TSTG Collector – Emitter Voltage Collector – Base Voltage Emmiter – Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range -140V -140V -5V -1A 1W 5.71mW/ °C 5W 28.6mW / °C –65 to +200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 7745 Issue 1 2N3634CSM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BVCEO Collector–Emitter Breakdown Voltage1 IC = -10mA IB = 0 -140 BVCBO Collector – Base Breakdown Voltage IC = -100μA IE = 0 -140 BVEBO Emitter – Base Breakdown Voltage IC = 0 IE = -10μA -5.0 IEBO Emitter Cut-off Current VBE = -3.0V IC = 0 -50 ICBO Collector Cut-off Current VCB = -100V IE = 0 -100 IC = -0.1mA VCE = -10V 40 IC = -1.0mA VCE = -10V 45 IC = -10mA VCE = -10V 50 IC = -50mA VCE = -10V 50 IC = -150mA VCE = -10V 25 IC = -10mA IB = -1.0mA -0.3 IC = -50mA IB = -5mA -0.5 IC = -10mA IB = -1.0mA -0.8 IC = -50mA IB = -5mA V nA ON CHARACTERISTICS hFE DC Current Gain VCE(sat) Collector – Emitter Saturation Voltage1 VBE(sat) Base – Emitter Saturation Voltage 150 -0.65 -0.9 − V V SMALL SIGNAL CHARACTERISTICS ft Current Gain Bandwidth Product Cob Output Capacitance Cib Input Capacitance hie Input Impedance hre Voltage Feedback Ratio hfe Small Signal Current Gain hoe Output Admittance NF Noise Figure VCE = -30V IC = -30mA f = 100MHz VCB = -20V MHz 100 IE = 0 f = 100kHz VBE = 1.0V IC = 0 f = 1.0MHz 100 VCE = -10V IC = -10mA f = 1.0kHz 40 10 pF 75 pF 600 Ω 3.0 x10-4 160 — 200 μmhos 3.0 dB VCE = -10V IC = -0.5mA RS = 1.0KΩ f = 1.0kHz VBE = 4.0V 400 IB1 = IB2 =-5mA 600 SWITCHING CHARACTERISTICS ton Turn–On Time VCC = -100V toff Turn–Off Time IC = -50mA ns 1) Pulse test : Pulse Width < 300μs ,Duty Cycle < 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 7745 Issue 1