SEME-LAB 2N4416DCSM

SEME
2N4416DCSM
LAB
SMALL SIGNAL DUAL
N–CHANNEL J–FET IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
MECHANICAL DATA
Dimensions in mm (inches)
FEATURES
1.40 ± 0.15
(0.055 ± 0.006)
3
2
1
4
A
6
5
6.22 ± 0.13
(0.245 ± 0.005)
0.23 rad.
(0.009)
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
A = 1.27 ± 0.13
(0.05 ± 0.005)
APPLICATIONS:
(LCC2 PACKAGE)
Underside View
PAD 1 – Gate 1
PAD 2 – Source 1
PAD 3 – Drain 2
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE
4.32 ± 0.13
(0.170 ± 0.005)
1.65 ± 0.13
(0.065 ± 0.005)
0.64 ± 0.06
(0.025 ± 0.003)
2.54 ± 0.13
(0.10 ± 0.005)
2.29 ± 0.20
(0.09 ± 0.008)
Hermetically sealed surface mount version
of the popular 2N4416 for high reliability /
space applications requiring small size
and low weight devices.
PAD 4 – Gate 2
PAD 5 – Source 2
PAD 6 – Drain 1
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C unless otherwise stated)
VGD
VGS
IG
PD
Tj
Tstg
Gate – Drain Voltage
Gate – Source Voltage
Gate Current
Power Dissipation
Derate Above 25°C
Operating Junction Temperature Range
Storage Temperature Range
PER SIDE
TOTAL DEVICE
–30V
–30V
10mA
350mW
2.8mW/°C
500mW
4.0mW/°C
–55 to 150°C
–55 to 150°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Document Number 3292
Issue 1
SEME
2N4416DCSM
LAB
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
–30
–35
Max. Unit
STATIC CHARACTERISTICS
V(BR)GSS
Gate – Source Breakdown Voltage
VDS = 0V
IG = –1µA
VGSS(off)
Gate – Source Cut–off Voltage
VDS = 15V
ID = 1nA
IDSS*
Saturation Current
VDS = 15V
VGS = 0V
IGSS
Gate Reverse Current
ID(off)
Drain Cut–off Current
VDS(on)
RDS(on)
5
–3
–6
10
15
VGS = –15V
–1
–0.6
–200
V
mA
nA
VDS = 0V
Tamb = 125°C
VDG = 10V
VGS = –10V
VDS = 10V
VGS = –6V
Drain – Source On Voltage
VGS = 0V
ID = 3mA
0.25
Drain – Source On Resistance
VGS = 0V
ID = 1mA
150
Ω
VGS = 0V
ID = 0mA
150
Ω
2.2
pF
0.7
pF
100
2
0.4
pA
nA
DYNAMIC CHARACTERISTICS
RDS(on)
Drain – Source On Resistance
CISS
Common – Source Input Capacitance
CRSS
Common – Source Reverse Transfer VDS = 15V
Capacitance
f = 1kHz
VDS = 15V
f = 1KHz
Equivalent Input Noise Voltage
VGS =0V
f = 1MHz
VDG = 10V
en
VGS = 0V
VGS =0V
f = 1kHz
6
nV
√Hz
* Pulse Test: PW ≤ 300 µs Duty Cycle ≤ 30%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Document Number 3292
Issue 1