2N7091 MECHANICAL DATA Dimensions in mm(inches) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 10.41 (0.410) 10.67 (0.420) P–CHANNEL ENHANCEMENT MODE TRANSISTOR V(BR)DSS ID(A) RDS(on) 12.07 (0.500) 19.05 (0.750) 1 2 3 -100V -14A 0.20W 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) BSC 3.05 (0.120) BSC TO–257AB Metal Package FEATURES • TO257AB HERMETIC PACKAGE FOR HIGH RELIABILITY APPLICATIONS • SCREENING OPTIONS AVAILBLE Pin 1 – Gate Pin 2 – Drain Pin 3 – Source • SIMPLE DRIVE REQUIREMENTS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDS Drain – Source Voltage - 100V VGS Gate – Source Voltage ±20V ID Continuous Drain Current (TJ = 150°C) IDM Pulsed Drain Current PD Power Dissipation TC = 25°C -14A TC = 100°C -8.7A 56A TC = 25°C 70W TC = 100°C 27W TJ , Tstg Operating Junction and Storage Temperature Range TL Lead Temperature (1/16” from case for 10 sec.) –55 to 150°C 300°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 2653 Issue 1 2N7091 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Test Conditions Min. STATIC ELECTRICAL RATINGS V(BR)DSS Drain–Source Breakdown Voltage VGS = 0 ID = -250µA -100 VGS(th) Gate Threshold Voltage VDS = VGS ID = -250µA -2 IGSS Gate – Body Leakage VDS = 0 VGS = ±20V IDSS Zero Gate Voltage Drain Current ID(on) rDS(on) gfs On–State Drain Current1 VDS = -10V VGS = -10V Drain – Source On–State VGS = -10V Forward Transconductance1 ID = 8.7A TJ = 125°C VDS = -15V IDS = -8.7A Unit -4 V ±100 nA -25 TJ = 125°C Resistance Max. V VDS = -80V VGS = 0 1 Typ. -250 -14 µA A 0.15 0.20 2.3 0.32 5.0 W S DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0 1300 Coss Output Capacitance VDS = 25V 750 Crss Reverse Transfer Capacitance f = 1MHz 310 Qg Qgs Qgd td(on) tr Total Gate Charge2 Gate Source Gate Drain Charge2 Charge2 Turn–On Delay Rise Time2 Time2 td(off) Turn–Off Delay tf Fall Time2 VDS = -50 VGS = -10V ID = -14A VDD = -50V ID = -14A VGEN =-10V Time2 RL = 3.5W RG = 4.7W pF 50 62 10 15 27 35 10 30 50 80 40 80 40 60 nC ns SOURCE – DRAIN DIODE CHARACTERISTICS IS Continuous Current -14 ISM Pulsed Current -56 VSD Diode Forward Voltage1 IF = -14A trr Reverse Recovery Time IF = -14A 150 Qrr Reverse Recovery Charge di/dt = 100A/µs 0.3 1 Pulse VGS = 0 A -2 V 300 ns µC test : Pulse Width < 300ms ,Duty Cycle < 2% of Operating Temperature 2 Independent THERMAL RESISTANCECHARACTERISTICS Parameter Min. Typ. Max. RthJC Thermal resistance Junction-Case 1.8 RthJA Thermal resistance Junction-ambient 80 RthCS Thermal resistance Case to Sink Unit °C/W 1.0 Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 2653 Issue 1