2N4416A 2N4416A SMALL SIGNAL N–CHANNEL J–FET THAT IS DESIGNED TO PROVIDE HIGH PERFORMANCE AMPLIFICATION AT HIGH FREQUENCIES MECHANICAL DATA Dimensions in mm (inches) 4.95 (0.195) 4.52 (0.178) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) FEATURES • EXCELLENT HIGH FREQUENCY GAINS 12.7 (0.500) min. 0.48 (0.019) 0.41 (0.016) dia. • CECC SCREENING OPTIONS • SPACE QUALITY LEVEL OPTIONS 2.54 (0.100) Nom. 4 3 1 APPLICATIONS: 2 The 2N4416 and 2N4416A are N-Channel JFETs designed to provide high-performance amplification, especially at high-frequency. TO-72 (TO-206AF) PIN 1 - Case PIN 3 -Drain PIN 2 - Gate PIN 4 - Source ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C unless otherwise stated) VGD VGS IG PD Tj Tstg Gate – Drain Voltage Gate – Source Voltage Gate Current Power Dissipation Derate Operating Junction Temperature Range Storage Temperature Range 2N4416 –30V –30V 2N4416A –35V –35V 10mA 300mW 2.4mW / °C –55 to 150°C –55 to 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3631 Issue 1 2N4416A 2N4416A ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit STATIC CHARACTERISTICS V(BR)GSS Gate – Source Breakdown Voltage VDS = 0V 2N4416 –30 –36 IG = –1µA 2N4416A –35 –36 2N4416 –3 –6 V VGSS(off) Gate – Source Cut–off Voltage VDS = 15V ID = 1nA 2N4416A –2.5 –3 –6 IDSS* Saturation Current VDS = 15V VGS = 0V 5 10 15 mA IGSS Gate Reverse Current VGS = –20 VDS = 0V –2 –100 pA Tamb = 125°C –4 –100 nA IG Gate Operating Current VDG = 10V ID = 1mA –20 ID(off) Drain Cut–off Current VDS = 10V VGS = –10V VGS(F) Gate – Source Forward Voltage IG = 1mA VDS = 0V 0.7 V RDS(on) Drain – Source On Resistance VGS = 0V ID = 1mA 150 Ω Transconductance VDS = 15V VGS = 0V Common – Source Output f = 1kHz pA 2 DYNAMIC CHARACTERISTICS gfs gos Common – Source Forward Transconductance Ciss Crss Coss _ en Common – Source Input Capacitance Common – Source Reverse Transfer VDS = 15V Capacitance f = 1MHz VGS = 0V Common – Source Output Capacitance Equivalent Input Noise Voltage VDS = 10V VGS = 0V f = 1kHz 4.5 6 7.5 ms 15 50 µs 2.2 4 0.7 0.8 1 2 6 pF nV √Hz Pulse Test; PW = 300µs, Duty Cycle # 3% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3631 Issue 1