2N4928CSM GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) FEATURES 0.31 rad. (0.012) • SILICON PNP TRANSISTOR • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) 3 2 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) 1 1.91 ± 0.10 (0.075 ± 0.004) 0.31 rad. (0.012) 3.05 ± 0.13 (0.12 ± 0.005) A= 1.02 ± 0.10 (0.04 ± 0.004) • CECC SCREENING OPTIONS • SPACE QUALITY LEVELS OPTIONS A 1.40 (0.055) max. LCC1 PACKAGE PAD 1 – Base • JAN LEVEL SCREENING OPTIONS Underside View PAD 2 – Emitter PAD 3 – Collector APPLICATIONS: Hermetically sealed surface mount version of the 2N4928 for high reliability / space applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD RθJA Tstg,Tj Collector – Base Voltage(IE = 0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Collector Current Total Device Dissipation Derate above 50°C Thermal Resistance Junction to Ambient Storage Temperature,Operating Temp Range -100V -100V -4V -100mA 350mW 2.0mW / °C 500°C/W –55 to 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5884 Issue 1 2N4928CSM ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit V(BR)CEO* Collector – Emitter Breakdown Voltage IC = -10mA IB = 0 -100 V(BR)CBO* Collector – Base Breakdown Voltage IC = -100µA IE = 0 -100 V(BR)EBO* Emitter – Base Breakdown Voltage IE = -100µA IC = 0 -4.0 ICBO* Collector – Base Cut-off Current IB = 0 VCB = -50V -0.5 IEBO* Emitter Cut-off Current (IC = 0) IC = 0 VEB = 3V -0.5 VCE(sat)* Collector – Emitter Saturation Voltage IC = -10mA IB = -1mA -0.5 VBE(ON) Base – Emitter On Voltage IC = -10mA VCE = -10V -1.0 IC = -1mA VCE = -10V 20 IC = -10mA VCE = -10V 25 IC = -50mA VCE = -10V 20 IC = -20mA VCE = -20V hFE* DC Current Gain fT Transition Frequency Ccb Collector – Base Capacitance Ceb Collector – Emitter Capacitance f = 100MHz VCB = -20V IE = 0 f = 140kHz VBE = -2.0V IC = 0 f = 140kHz 100 V µA V 200 — 1,000 MHz 6.0 pF 40 * Pulse test tp = 300µs , δ ≤ 2% fT is defined as the frequency at which hFE extrapolates to unity. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5884 Issue 1