2N3439DCSM 2N3440DCSM HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) FEATURES 3 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A= 1.27 ± 0.13 (0.05 ± 0.005) LCC2 PACKAGE Underside View PAD 1 – Collector 1 PAD 2 – Base 1 PAD 3 – Base 2 PAD 4 – Collector 2 PAD 5 – Emitter 2 PAD 6 – Emitter 1 • DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR 4.32 ± 0.13 (0.170 ± 0.005) 2 2.54 ± 0.13 (0.10 ± 0.005) 1.40 ± 0.15 (0.055 ± 0.006) 1.65 ± 0.13 (0.065 ± 0.005) 0.64 ± 0.08 (0.025 ± 0.003) 2.29 ± 0.20 (0.09 ± 0.008) • HERMETIC CERAMIC SURFACE MOUNT PACKAGE • CECC SCREENING OPTIONS • SPACE QUALITY LEVELS OPTIONS • HIGH VOLTAGE APPLICATIONS: Dual Hermetically sealed surface mount version of the popular 2N3439 and 2N3440 for high reliability / space applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD PD Rja Tstg Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IB = 0) Collector Current Per Device Dissipation Total Device Dissipation Derate above 25°C (Per Device) (Total) Thermal Resistance Junction to Ambient Storage Temperature 2N3439 2N3440 450V 350V 7V 500mA 350mW 525mW 2mW / °C 3mW /°C 240°C/W –55 to 200°C 300V 250V 7V 500mA 350mW 525mW 2mW / °C 3mW /°C 240°C/W –55 to 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6584 Issue 1 2N3439DCSM 2N3440DCSM ELECTRICAL CHARACTERISTICS (per device) Parameter VCEO(sus)* (Tcase = 25°C unless otherwise stated) Test Conditions Min. Typ. Max. Unit Collector – Emitter Sustaining Voltage IC = 50mA 2N3439 350 (IB = 0) IC = 50mA 2N3440 250 Collector Cut-off Current VCE = 300V 2N3439 20 (IB = 0) VCE = 200V 2N3440 50 Collector Cut-off Current VCE = 450V 2N3439 500 (VBE = -1.5V) VCE = 300V 2N3440 500 Collector – Base Cut-off Current VCB = 360V 2N3439 20 (IE = 0) VCB = 250V 2N3440 20 IEBO* Emitter Cut-off Current (IC = 0) VEB = 6V VCE(sat)* Collector – Emitter Saturation Voltage IC = 50mA VBE(sat)* Base – Emitter Saturation Voltage ICEO ICEX* ICBO* hFE* DC Current Gain V µA µA µA 20 µA IB = 4mA 0.5 V IC = 50mA IB = 4mA 1.3 V IC = 20mA 2N3439 VCE = 10V 2N3440 160 — IC = 2mA VCE = 10V 40 2N3439 30 — * Pulse test tp = 300μs , δ ≤ 2% DYNAMIC CHARACTERISTICS Parameter (Tcase = 25°C unless otherwise stated) Test Conditions fT Transition Frequency IC = 10mA VCE = 10V f = 5MHz Cob Output Capacitance VCB = 10V IE = 0 f = 1.0MHz hfe Small Signal Current Gain IC = 5mA VCE = 10V f = 1kHz Min. Typ. Max. Unit 15 MHz 10 pF 25 Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6584 Issue 1