2N5781 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) SILICON EPITAXIAL PNP TRANSISTOR 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. General-Purpose types for Switching and Linear-Amplifier Applications 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. FEATURES • Low saturation voltages 5.08 (0.200) typ. • Maximum Safe area of operation curves 2.54 (0.100) 2 1 • High gain at high current 3 • High breakdown voltages 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) The 2N5781 is intended for medium-power switching and complementary-symmetry audio amplifier applications. 45° TO39 (TO205AD) Package PIN 1 – Emitter PIN 2 – Base PIN 3 – Case ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCER(BR) VCEO(BR) VEBO IC IB PT Collector – Base Voltage Collector – Emitter Breakdown Voltage RBE = 100Ω Collector – Emitter Breakdown Voltage Emitter – Base Voltage Continuous Collector Current Continuous Base Current Total Device Dissipation At Case Temperatures up to = 25°C At Ambient Temperatures up to = 25°C TJ , TSTG Operating Junction and Storage Temperature Range -80V -80V -65V -5V -3.5A -1A 10W 1W –65 to +200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6659 Issue 1 2N5781 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter ICER Collector Cut-off Current ICEX Collector Cut-off Current ICEO Test Conditions VCE = -65V Min. Typ. Max. - 10 Unit μA RBE = 100Ω TC = 150°C - 1.0 mA VCE = - 75V VBE = -1.5V - 10 μA RBE = 100Ω TC = 150°C - 1.0 mA Collector Cut-off Current VCE = -50V IB = 0 - 100 μA IEBO Emitter Cut-off Current VBE = - 5V IC = 0 - 10 μA hFE* DC Current Gain VCE = -2V IC = -1.0A 20 VCE = -2V IC = -3.2A 4 VCEO(BR)* Collector – Emitter Breakdown Voltage IC =- 10mA IB = 0 - 65 VCER(BR)* Collector – Emitter Breakdown Voltage IC = -10mA RBE = 100Ω - 80 VBE Base – Emitter Voltage VCE = -2V IC = -1.0A - 1.5 VCE(sat) Collector – Emitter Saturation Voltage IC = -1.0A IB = - 0.1A - 0.5 fT Transition Frequency VCE = - 2V IC = - 0.1A f = 4MHz hfe IC = -0.1mA 8 100 — V 60 Small Signal Common – Emitter VCE = -2V Current Gain f = 1.0kHz tON Saturated Switching Time VCC= -30V IB1 = IB2 0.5 tOFF Turn-off Time IC = -1.0A IB = - 0.1A 2.5 RθJC Thermal Resistance Junction – Case 17.5 RθJA Thermal Resistance Junction – Ambient 175 V MHz — 25 μs °C/W NOTES 1. * Pulse Test: tp = 300μs, δ = 1.8%. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6659 Issue 1