2N6385SMD05 MECHANICAL DATA Dimensions in mm (inches) SILICON POWER NPN DARLINGTON TRANSISTOR 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3.05 (0.120) 3 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 FEATURES • High Gain Darlington Performance 0.127 (0.005) 2 APPLICATIONS • Audio Amplifiers • Hammer Drivers • Shunt and Series Regulators 0.127 (0.005) 0.127 (0.005) 16 PLCS 0.50(0.020) 0.50 (0.020) max. 7.26 (0.286) SMD05 (TO-276AA) Pad 1 – Base Pad 2 – Collector Pad 3 – Emitter ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C unless otherwise stated) VCEO VCEX VCBO VEBO IC ICM IB Ptot TSTG , TJ Collector – Emitter Voltage Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Continuous Collector Current Peak Collector Current Base Current - Continuous Total Dissipation at Tcase = 25°C Derate above 25°C Operating and Storage Junction Temperature Range(2) 80V 80V 80V 5V 10A 15A 0.25A 100W 0.571W/°C –65 to +200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6387 Issue 1 2N6385SMD05 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS VCEO(BR)* Collector – Emitter Breakdown Voltage ICEO Collector Cut–off Current ICEV Collector Cut–off Current IEBO Emitter Cut–off Current VCER(BR) VCEV(BR) hFE VCE(sat) Collector–Emitter Breakdown Voltage* Collector–Emitter Breakdown VCE = 80V IB = 0 V 80 1.0 VCE = VCEO(BR) VBE(off) = 1.5V 0.3 TC = 150°C 3.0 VEB = 5V IC = 0 10 REB =100Ω IC = 200mA 80 VCE = 3V IC = 5A 1000 VCE = 3V IC = 10A 100 Collector – Emitter IC = 5A IB = 0.01A 2.0 Saturation Voltage IC = 10A IB = 0.1A 3.0 VCE = 3V IC = 5A 2.8 VCE = 3V IC = 10A 4.5 DC Current Gain VF Diode Forward Voltage DYNAMIC CHARACTERISTICS Cob Output Capacitance *Magnitude of Common Emitter mA mA 80 IF = 10A VCB =10V IE = 0 ftest= 1.0MHz VCE = 5V Small Signal Short-Circuit Common Emitter Small Signal mA V IC = 200mA Base – Emitter On Voltage hfe IB = 0 VBE(off) = 1.5V Voltage* ON CHARACTERISTICS VBE(on) lhfel IC = 200mA IC = 1.0A f = 1.0KHz VCE = 5V Short-Circuit Forward IC = 1.0A f = 1.0KHz 20000 — V V 4.0 V 200 pF 20 — 1000 — 120 mJ SECOND BREAKDOWN Es/b Energy with Base-Reverse Biased L =12mH RBE = 100Ω VBE(off) = 1.5V IC = 4.5A * Pulse test tp = 300μs , Duty Cycle ≤ 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6387 Issue 1