2N6800LCC4 MECHANICAL DATA N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Dimensions in mm (inches) 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 7 6 5 4 0.33 (0.013) Rad. 0.08 (0.003) 3 1.65 (0.065) 1.40 (0.055) 1.39 (0.055) 1.15 (0.045) BVDSS ID RDS(on) 0.76 (0.030) 0.51 (0.020) 0.43 (0.017) 0.18 (0.007 Rad. FEATURES D • • • • G S LCC4 CERAMIC SURFACE MOUNT PACKAGE GATE DRAIN SOURCE 400V 3.0A 1.0Ω Dynamic dv/dt Rating Simple Drive requirements Ease of Paralleling Hermetic Ceramic Surface Mount Package PINS 4,5 PINS 1,2,15,16,17,18 PINS 6,7,8,9,10,11,12,13 ABSOLUTE MAXIMUM RATINGS T VDSS Drain - Source Voltage ID Drain Current CASE = 25°C unless otherwise stated 400V - Continuous (VGS = 10V, TC = 25°C) 3A - Continuous (VGS = 10V, TC = 100°C) 2A - Pulsed 2 IDM Drain Current VGSS Gate - Source Voltage ±20V Ptot Total Power Dissipation at Tcase ≤ 25°C 25W De-rate Linearly above 25°C Tj,Tstg Operating and Storage Junction Temperature Range Rthj-mb Thermal Resistance Junction – Mounting Base dv/dt NOTES: 3 Peak Diode Recovery 12A 0.20W/°C -55 to +150°C 5.0°C/W 4V/ns 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width ≤ 380µS, Duty Cycle, δ 2% 3) TJ ≤ 150°C, VDD ≤ BVDSS, Suggested RG = 7.5 , ISD ≤ 1.5A, di/dt ≤ 50A/µs Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk DOC 7820, ISSUE 1 2N6800LCC4 STATIC ELECTRICAL RATINGS (T case =25°C unless otherwise stated) Symbol Parameter Test Conditions BVDSS Drain – Source Breakdown Voltage VGS = 0V ID = 250µA IDSS Zero Gate Voltage Drain Current VDS = 320V IGSS Gate – Source Leakage Current VGS(TH) gFS V - VGS = 0V - - 25 TC = 125°C - - 250 VGS = ±20V VDS = 0V - - ±100 VDS ≥ VGS ID = 250µA 2.0 - 4.0 TC = 125°C 1.0 - - TC = -55°C - - 5.0 ID = 2A - - 1.0 TC = 125°C - - 2.40 VGS = 10V ID = 3A - - 1.15 VDS ≥ 15V IDS = 2A 2 - - - 620 - - 200 - - 75 - 19.1 - 33 1.0 - 5.8 6.7 - 19.9 - - 30 - - 35 - - 55 - - 35 - - 3 - - 12 3 Drain – Source On State Resistance Forward Transconductance Unit - Gate Threshold Voltage 3 Max. 400 VGS = 10V RDS(ON) Min. Typ. µA nA V Ω S DYNAMIC CHARACTERISTICS Ciss Input Capacitance VDS = 25V f = 1.0MHz Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Qgs VGS = 0V 2 Total Gate Charge Gate – Source Charge VDS = 200V VGS = 10V 2 2 Qgd Gate – Drain Charge Td(on) Turn-On Delay tr Rise Time Td(off) Turn-Off Delay Time tf Fall Time VDD = 200V RG = 7.5Ω ID = 3A ID = 3A VGS = 10V pF nC ns SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS IS Continuous Source Current (MAX) 1 ISM Pulsed Source Current (MAX) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr 2 2 Reverse Recovery Charge A VGS = 0V Is = 3A - - 1.4 V VGS = 0V di/dt=100A/µs Is = 3A VDD ≤ 50V - - 700 ns - - 6.2 µC Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk DOC 7820, ISSUE 1