2N4033 MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED MEDIUM VOLTAGE SWITCH 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. DESCRIPTION 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. The 2N4033 is a silicon expitaxial planar PNP transistors in jedec TO-39 metal case intended for use in switching applications. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45° TO-39 Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector ABSOLUTE MAXIMUM RATINGS Tcase = 25°c unless otherwise stated VCEO Collector – Emitter Voltage -80V VCBO Collector – Base Voltage -80V VEBO Emitter – Base Voltage -5V IC Continuous Collector Current -1A PD Total Device Dissipation at TA = 25°C Derate above 25°C PD Total Device Dissipation at TC = 25°C Derate above 25°C Tstg Operating and Storage Temperature Range 0.8W 4.56 mW/°C 4W 22.8mW/°C –65 to +200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3069 Issue:1 2N4033 THERMAL CHARATERISTICS Rthj-case Thermal Resistance Junction-case Max 25 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 140 °C/W ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. ICBO Collector Cut Off Current VCB = -60V IEBO Emitter Cut Off Current VEB = -5V VCE(sat) Collector Emitter Saturation Voltage1 VBE(sat) TA = 150°C Typ. Max. Unit -50 nA -50 µA -10 µA IC = -150mA IB = -15mA -0.15 IC = -500mA IB = -50mA 0.50 Base Emitter Saturation Voltage1 IC = -150mA IB = -15mA -0.9 V VBE(on) Base Emitter on Voltage IC = -500mA VCE = -0.5V1 -1.1 V V(BR)CEO Collector Emitter Breakdown Voltage IC = -10mA -80 V V(BR)CBO Collector Base Breakdown Voltage IC = -10µA -80 V V(BR)EBO Emitter Base Breakdown Voltage IE = -10µA -5.0 V IC = -100mA VCE = -5.0V @-55°C1 hFE DC Current Gain V 40 IC = -100µA VCE = -5.0V 75 IC = -100mA VCE = -5.0V1 100 IC = -500mA VCE = -5.0V1 70 IC = -1.0A VCE = -5.0V1 25 300 — SMALL SIGNAL CHARACTERISTICS Cobo Output Capacitance VCE = -10V f = 1MHz 20 Cibo Input Capacitance VEB = -0.5V f = 1MHz 110 hfe Small Signal Gain IC = -50mA VCE = -10V f = 100MHz 1.5 5.0 pF — SWITCHING CHARACTERISTICS ton Turn On Time tf Fall Time ts Storage Time 1Pulse 100 IC = -500mA IB1=-IB2 = -50mA 50 ns 350 test tp = 300µs , δ = 1% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3069 Issue:1