BFW43 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) PNP SILICON TRANSISTOR 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES • PNP High Voltage Planar Transistor 2.54 (0.100) Nom. • Hermetic TO18 Package 3 1 2 • Full Screening Options Available TO–18 METAL PACKAGE Underside View PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD Tstg TJ RθJA RθJC Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IB = 0) Collector Current Total Device Dissipation TA = 25 °C Total Device Dissipation TC = 25 °C Storage Temperature Max Operating Junction Temperature Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case -150V -150V -6V 0.1A 0.4W 1.4W –55 to 200°C 200°C 438°C/W 125°C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5989 Issue 1 BFW43 ELECTRICAL CHARACTERISTICS Continued (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit. V(BR)CBO Collector - Base Breakdown Voltage (1) IC = -10µA , IE = 0 -150 V V(BR)CEO Collector - Emitter Breakdown Voltage (1) IC =- 2mA , IB = 0 -150 V VCB = -100V , IE = 0 ICBO -0.2 -10 nA -0.03 -10 µA Colllector Cut Off Current VCB = -100V , IE = 0 V(BR)EBO Emitter - Base Breakdown Voltage (1) TA =125 °C -6 IE = -10µA , IC = 0 V VCE(sat) Collector - Emitter Saturation Voltage (1) IC =-10mA , IB = -1mA -0.1 -0.5 V VBE(sat) Base - Emitter Saturation Voltage (1) IC =-10mA , IB = -1mA -0.74 -0.9 V hFE DC Current Gain (1) IC =-1mA, VCE = -10V IC =-10mA, VCE = -10V IC =-10µA, VCE = -10V fT Current Gain - Bandwith Product CEBO Emitter- Base Capacitance CCBO Collector- Base Capacitance 40 40 TA = -55 °C 50 IC =-1mA ,VCE =-10V, f=20 MHZ IC =-10mA 85 100 30 MHZ 60 VEB =-0.5V , IE = 0 , f=1 MHZ 20 25 pF VCB =-5V , IE = 0 , f=1 MHZ 5 7 pF (1) Pulse test : Pulse Width < 300µs ,Duty Cycle < 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5989 Issue 1