SEME-LAB 2N2894_03

2N2894
PNP SILICON
TRANSISTOR
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
FEATURES
4.95 (0.195)
4.52 (0.178)
• SILICON PNP TRANSISTOR
5.33 (0.210)
4.32 (0.170)
• HIGH SPEED, LOW SATURATION SWITCH
12.7 (0.500)
min.
APPLICATIONS:
0.48 (0.019)
0.41 (0.016)
dia.
GENERAL PURPOSE SWITCHING
APPLICATIONS
2.54 (0.100)
Nom.
3
1
2
TO18
PIN1 – EMITER
Underside View
PIN 2 – BASE
PIN 3 – COLLECTOR
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
-12V
VCEO
Collector – Emitter Voltage
-12V
VEBO
Emitter – Base Voltage
-4V
IC
Collector Current
PD
Total Device Dissipation
200mA
@ TA =25°C
Derate above 25°C
PD
Total Device Dissipation
@ TC =25°C
Derate above 25°C
TSTG , TJ
Operating and Storage Temperature Range
360mW
2.06mW / °C
1.2W
6.85mW / °C
–65 to +200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Document Number 4081
Issue 1
2N2894
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Parameter
BVCEO(SUS) Collector – Base BreakdownVoltage
Test Conditions
Typ.
Max. Unit
IB = 0
-12
BVCES
Collector – Emitter Breakdown Voltage IC = -10µA
VBE = 0
-12
BVCBO
Collector – Base Breakdown Voltage
IC = -10µA
IE = 0
-12
BVEBO
Emitter Base Breakdown Voltage
IE = 100µA
IC = 0
-4
ICBO
Collector Cut-off Current
VCB = -6V
Tamb = 125°C
-10
ICES
Collector Cut-off Current
VCE = -6V
VBE = 0
-80
IB
Base Current
VCE = -6V
VBE = 0
-80
IC = -10mA
IB = -1mA
-0.15
VCE(sat)
Collector – Emitter Saturation Voltage
IC = -30mA
IB = -3mA
-0.2
IC = -100mA
IB = -10mA
-0.5
IC = -10mA
IB = -1mA
-0.78
-0.98
IC = -30mA
IB = -3mA
-0.85
-1.2
IC = -100mA
IB = -10mA
IC = -10mA
VCE = -0.3V
30
IC = -30mA
VCE = -0.5V
40
IC = -30mA
VCE = -0.5V
VBE(sat)
hFE
Base – Emitter On Voltage
DC Current Gain
IC = -10mA
Min.
Tamb = -55°C
fT
Current Gain Bandwidth Product
Cob
Output Capacitance
Cib
Input Capacitance
ton
Turn on Time
toff
Turn off Time
IC = –30mA
VCE = –0.5V
VCE = -10V
f = 100MHz
IC = -30mA
VCB = -5V
IE = 0
f = 140KHz
VBE = -0.5V
IC = 0
f = 140KHz
VCC = -2V
IC = -30mA
IB1 = – IB2=1.5mA
V
µA
nA
V
V
-1.7
150
—
17
25
400
MHz
6
pF
6
60
ns
90
* Pulse Test: tp ≤ 300µs, δ ≤ 1%.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Document Number 4081
Issue 1