SML50B26F TO–247AD Package Outline. Dimensions in mm (inches) (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFET 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 4.50 (0.177) M ax. 3.55 (0.140) 3.81 (0.150) 1 2 1.65 (0.065) 2.13 (0.084) 19.81 (0.780) 20.32 (0.800) 0.40 (0.016) 0.79 (0.031) VDSS 500V 26A ID(cont) Ω RDS(on) 0.200Ω 3 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) 2.21 (0.087) 2.59 (0.102) Pin 1 – Gate 5.25 (0.215) BSC Pin 2 – Drain Pin 3 – Source D • • • • • Faster Switching Lower Leakage 100% Avalanche Tested Popular TO–247 Package Fast Recovery Body Diode StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. G S ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS Drain – Source Voltage 500 V ID Continuous Drain Current 26 A IDM Pulsed Drain Current 1 104 A VGS Gate – Source Voltage ±20 VGSM Gate – Source Voltage Transient ±30 Total Power Dissipation @ Tcase = 25°C 300 W Derate Linearly 2.4 W/°C PD TJ , TSTG Operating and Storage Junction Temperature Range TL Lead Temperature : 0.063” from Case for 10 Sec. 300 IAR Avalanche Current1 (Repetitive and Non-Repetitive) 26 EAR Repetitive Avalanche Energy 1 30 EAS Single Pulse Avalanche Energy 2 –55 to 150 1300 V °C A mJ 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°C, L = 3.85mH, RG = 25Ω, Peak IL = 26A Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] 8/99 SML50B26F STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) Characteristic Drain – Source Breakdown Voltage Test Conditions VGS = 0V , ID = 250µA Zero Gate Voltage Drain Current VDS = VDSS 25 (VGS = 0V) VDS = 0.8VDSS , TC = 125°C 250 IGSS Gate – Source Leakage Current VGS = ±30V , VDS = 0V ±100 nA VGS(TH) Gate Threshold Voltage VDS = VGS , ID = 1.0mA 4 V ID(ON) On State Drain Current 2 RDS(ON) Drain – Source On State Resistance 2 BVDSS IDSS VDS > ID(ON) x RDS(ON) Max VGS = 10V Min. 500 Typ. 2 Max. Unit V 26 µA A VGS = 10V , ID = 0.5 ID [Cont.] 0.20 Ω DYNAMIC CHARACTERISTICS Ciss Characteristic Input Capacitance Test Conditions VGS = 0V Coss Output Capacitance Crss Min. Typ. 3700 Max. Unit 4440 VDS = 25V 510 715 Reverse Transfer Capacitance f = 1MHz 200 300 Qg Total Gate Charge3 VGS = 10V 150 225 Qgs Gate – Source Charge VDD = 0.5 VDSS 25 37 Qgd Gate – Drain (“Miller”) Charge ID = ID [Cont.] @ 25°C 70 105 td(on) Turn–on Delay Time VGS = 15V 12 25 tr Rise Time VDD = 0.5 VDSS 10 20 td(off) Turn-off Delay Time ID = ID [Cont.] @ 25°C 50 75 tf Fall Time RG = 1.8Ω 8 15 pF nC ns SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS IS Characteristic Continuous Source Current Test Conditions (Body Diode) ISM Pulsed Source Current1 (Body Diode) VSD Diode Forward Voltage2 VGS = 0V , IS = – ID [Cont.] dv / dt Peak Diode Recovery trr Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Peak Recovery Current Semelab plc. Min. IS ≤ ID [cont] dI / dt = 100A/µs VDD ≤ VDSS VR = 200V TJ ≤ 150°C RG = 2.0Ω Typ. Max. Unit 26 A 104 1.3 V 5 V/ns IS = – ID [Cont.] TJ = 25°C 250 dI / dt = 100A/µs TJ = 125°C 500 IS = – ID [Cont.] TJ = 25°C 1.3 dl / dt = 100A/µs TJ = 125°C 4.5 IS = – ID [Cont.] TJ = 25°C 12 dl / dt = 100A/µs TJ = 125°C 18 Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] ns µC A 8/99 SML50B26F THERMAL CHARACTERISTICS RθJC Characteristic Junction to Case RθJA Junction to Ambient Min. Typ. Max. Unit 0.42 °C/W 40 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] 8/99 SML50B26F Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] 8/99 SML50B26F CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] 8/99