2N6845LCC4 IRFE9120 MECHANICAL DATA Dimensions in mm (inches) P–CHANNEL POWER MOSFET 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 VDSS ID(cont) RDS(on) -100V -3.5A Ω 0.6Ω 0.76 (0.030) 0.51 (0.020) FEATURES 7 6 5 1.39 (0.055) 1.15 (0.045) 4 0.33 (0.013) Rad. 0.08 (0.003) 3 1.65 (0.065) 1.40 (0.055) • SURFACE MOUNT 0.43 (0.017) 0.18 (0.007 Rad. • SMALL FOOTPRINT • HERMETICALLY SEALED • DYNAMIC dv/dt RATING LCC4 GATE DRAIN SOURCE • AVALANCHE ENERGY RATING Pins 4,5 Pins1,2,15,16,17,18 Pins 6,7,8,9,10,11,12,13 • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ID Continuous Drain Current (VGS = -10V , Tcase = 25°C) -3.5A ID Continuous Drain Current (VGS = -10V , Tcase = 100°C) -2.2A IDM Pulsed Drain Current 1 -14A PD Power Dissipation @ Tcase = 25°C 14W ±20V Linear Derating Factor 0.09W/°C 2 EAS Single Pulse Avalanche Energy dv/dt Peak Diode Recovery 3 TJ , Tstg Operating and Storage Temperature Range Surface Temperature ( for 5 sec). 115mJ -5.0V/ns -55 to +150°C 300°C Notes 1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2% 2) @ VDD = -25V , Peak IL = -3.5A , Starting TJ = 25°C 3) @ ISD ≤ -3.5A , di/dt ≤ -110A/µs , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 7.5Ω Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5518 Issue 1 2N6845LCC4 IRFE9120 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter STATIC ELECTRICAL RATINGS BVDSS Drain – Source Breakdown Voltage ∆BVDSS Temperature Coefficient of ∆TJ Breakdown Voltage Static Drain – Source On–State RDS(on) Resistance 1 VGS(th) Gate Threshold Voltage gfs Forward Transconductance 1 IDSS Zero Gate Voltage Drain Current IGSS IGSS Forward Gate – Source Leakage Reverse Gate – Source Leakage Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time IS ISM VSD trr Qrr ton Test Conditions VGS = 0 ID = -1mA Reference to 25°C ID = -1mA VGS = -10V ID = -2.2A VGS = -10V ID = -3.5A VDS = VGS ID = -250µA VDS ≥ -15V IDS = -2.2A VGS = 0 VDS = -80V TJ = 125°C VGS = -20V VGS = 20V VGS = 0 VDS = -25V f = 1MHz VGS = -10V ID = -3.5A VDS = -50V Min. Typ. -100 RθJC Thermal Resistance Junction – Case RθJPC Thermal Resistance Junction – PC Board Unit V -0.10 V / °C 0.6 0.69 -4 -2 1.25 -25 -250 -100 100 380 170 45 Ω V Ω S( ) µA nA pF 16.3 4.7 9.0 60 100 50 70 VDD = -50V ID = -3.5A RG = 7.5Ω SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current 2 IS = -3.5A TJ = 25°C Diode Forward Voltage 1 VGS = 0 Reverse Recovery Time IF = -3.5A TJ = 25°C Reverse Recovery Charge 1 di / dt ≤ -100A/µs VDD ≤ -50V Forward Turn–On Time THERMAL CHARACTERISTICS Max. nC ns -3.5 -14 A -4.8 V 200 3.1 ns µC 9.1 26 °C/W Negligible Notes 1) Pulse Test: Pulse Width ≤ 300ms, δ ≤ 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5518 Issue 1