SuperFET TM FCH47N60F 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. • Typ. RDS(on) = 0.062Ω • Fast Recovery Type ( trr = 240ns) • Ultra Low Gate Charge (typ. Qg = 210nC) This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. • Low Effective Output Capacitance (typ. Cosseff. = 420pF) • 100% avalanche tested D G TO-247 G D S S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS IAR FCH47N60F Unit 600 V 47 29.7 A A 141 A (Note 1) ± 30 V Single Pulsed Avalanche Energy (Note 2) 1800 mJ Avalanche Current (Note 1) 47 A EAR Repetitive Avalanche Energy (Note 1) 41.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation 417 3.33 W W/°C -55 to +150 °C 300 °C (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθCS Thermal Resistance, Case-to-Sink RθJA Thermal Resistance, Junction-to-Ambient ©2006 Fairchild Semiconductor Corporation FCH47N60F Rev. A1 1 Typ. Max. Unit -- 0.3 °C/W 0.24 -- °C/W -- 41.7 °C/W www.fairchildsemi.com FCH47N60F 600V N-Channel MOSFET February 2006 Device Marking Device Package Reel Size Tape Width Quantity FCH47N60F FCH47N60F TO-247 - - 30 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Units VGS = 0V, ID = 250µA, TJ = 25°C 600 -- -- V VGS = 0V, ID = 250µA, TJ = 150°C -- 650 -- V ID = 250µA, Referenced to 25°C -- 0.6 -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0V, ID = 47A -- 700 -- V IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C --- --- 10 100 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 23.5A -- 0.062 0.073 Ω gFS Forward Transconductance VDS = 40V, ID = 23.5A -- 40 -- S -- 5900 8000 pF -- 3200 4200 pF -- 250 -- pF (Note 4) Dynamic Characteristics Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 160 -- pF Coss eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 420 -- pF VDD = 300V, ID = 47A RG = 25Ω -- 185 430 ns -- 210 450 ns -- 520 1100 ns -- 75 160 ns -- 210 270 nC -- 38 -- nC -- 110 -- nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 4, 5) VDS = 480V, ID = 47A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 47 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 141 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 47A -- -- 1.4 V trr Reverse Recovery Time 240 -- ns Reverse Recovery Charge VGS = 0V, IS = 47A dIF/dt =100A/µs -- Qrr -- 2.04 -- µC (Note 4) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 18A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 47A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FCH47N60F Rev. A1 2 www.fairchildsemi.com FCH47N60F 600V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID, Drain Current [A] 10 2 1 10 * Notes : 1. 250祍 Pulse Test 2. TC = 25°C 0 10 -1 0 10 10 ID , Drain Current [A] 2 150°C 1 10 -55°C - Note 1. VDS = 40V 0 2. 250µs Pulse Test 10 2 1 10 25°C 10 4 8 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.25 IDR , Reverse Drain Current [A] RDS(ON) [Ω],Drain-Source On-Resistance Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.20 0.15 VGS = 10V 0.10 VGS = 20V 0.05 2 10 1 10 150°C 25°C * Notes : 1. VGS = 0V 2. 250µs Pulse Test * Note : TJ = 25°C 0.00 0 0 20 40 60 80 100 120 140 160 180 10 200 0.2 0.4 0.6 Figure 5. Capacitance Characteristics 25000 VGS, Gate-Source Voltage [V] * Notes : 1. VGS = 0 V 2. f = 1 MHz Ciss Crss 0 1 10 1.6 VDS = 250V VDS = 400V 8 6 4 2 * Note : ID = 47A 0 50 100 150 200 250 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] FCH47N60F Rev. A1 10 0 10 1.4 VDS = 100V 15000 0 -1 10 1.2 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss 5000 1.0 Figure 6. Gate Charge Characteristics 20000 10000 0.8 VSD , Source-Drain Voltage [V] ID, Drain Current [A] Capacitance [pF] 6 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] 3 www.fairchildsemi.com FCH47N60F 600V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2. ID = 250µA 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 23.5 A 0.5 0.0 -100 200 -50 0 TJ, Junction Temperature [°C] 50 100 150 200 TJ, Junction Temperature [°C] Figure 9. Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 50 Operation in This Area is Limited by R DS(on) 2 40 100 µs ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 10 ms 1 10 DC * Notes : 1. TC = 25°C 2. TJ = 150°C 3. Single Pulse 0 10 0 10 20 10 -1 10 30 1 2 10 0 25 3 10 10 50 75 100 125 150 TC, Case Temperature [°C] VDS, Drain-Source Voltage [V] ZθJC(t), Thermal Response Figure 10. Transient Thermal Response Curve D = 0 .5 10 -1 * N o te s : 1 . Z θ J C ( t) = 0 .3 ° C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .2 0 .1 0 .0 5 10 10 PDM 0 .0 2 -2 t1 0 .0 1 -5 s in g le p u ls e 10 -4 10 -3 10 -2 10 t2 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] FCH47N60F Rev. A1 4 www.fairchildsemi.com FCH47N60F 600V N-Channel MOSFET Typical Performance Characteristics (Continued) FCH47N60F 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCH47N60F Rev. A1 5 www.fairchildsemi.com FCH47N60F 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FCH47N60F Rev. A1 6 www.fairchildsemi.com FCH47N60F 600V N-Channel MOSFET Mechanical Dimensions TO-247AD (FKS PKG CODE 001) Dimensions in Millimeters FCH47N60F Rev. A1 7 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18 8 FCH47N60F Rev. A1 www.fairchildsemi.com FCH47N60F 600V N-Channel MOSFET TRADEMARKS