FDPF2710T 250V N-Channel PowerTrench MOSFET General Description Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • • • • • 25A, 250V, RDS(on) = 36.3mΩ @VGS = 10 V Fast switching speed Low gate charge High performance trench technology for extremely low RDS(on) High power and current handling capability Application • Ballast Application D G GD S TO-220F S Absolute Maximum Ratings Symbol Parameter Ratings Unit 250 V ± 30 V 25 18.8 A A (Note 1) 100 A Single Pulsed Avalanche Energy (Note 2) 145 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds VDS Drain-Source Voltage VGS Gate-Source voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed EAS 4.5 V/ns 62.5 0.5 W W/°C -55 to +150 °C 300 °C (TC = 25°C) - Derate above 25°C Thermal Characteristics Min Max Unit RθJC Symbol Thermal Resistance, Junction-to-Case Parameter -- 2.0 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W ©2007 Fairchild Semiconductor Corporation FDPF2710T Rev. A 1 www.fairchildsemi.com FDPF2710T 250V N-Channel PowerTrench MOSFET September 2007 Device Marking Device Package Reel Size Tape Width Quantity FDPF2710T FDPF2710T TO-220F -- -- 50 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 250 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 0.25 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V VDS = 250V, VGS = 0V,TC = 125°C --- --- 10 500 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA VDS = VGS, ID = 250µA 3.0 3.9 5.0 V -- 36.3 42.5 mΩ -- 63 -- S -- 5470 7280 pF On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 25A gFS Forward Transconductance VDS = 10V, ID = 25A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 426 567 pF -- 97 146 pF -- 80 170 ns -- 252 514 ns -- 112 234 ns -- 154 318 ns -- 78 101 nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 125V, ID = 50A VGS = 10V, RGEN = 25Ω (Note 4, 5) VDS = 125V, ID = 50A VGS = 10V (Note 4, 5) -- 34 -- nC -- 18 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 25 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 150 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 25A -- -- 1.2 V trr Reverse Recovery Time -- 163 -- ns Qrr Reverse Recovery Charge VGS = 0V, IS = 50A dIF/dt =130A/µs -- 1.3 -- µC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1mH, IAS = 17A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 50A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDPF2710T Rev. A 2 www.fairchildsemi.com FDPF2710T 250V N-Channel PowerTrench MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 500 250 VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 100 o 150 C ID,Drain Current[A] ID,Drain Current[A] 100 10 o -55 C 10 o 25 C * Notes : 1. 250µs Pulse Test * Notes : 1. VDS = 20V 2. 250µs Pulse Test o 2. TC = 25 C 1 0.1 1 1 VDS,Drain-Source Voltage[V] 4 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.07 150 100 0.06 IS, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 6 8 VGS,Gate-Source Voltage[V] 0.05 VGS = 10V 0.04 VGS = 20V 0.03 * Notes : 1. VGS=0V 2. 250µs Pulse Test o TA = 150 C 10 o TA = 25 C o * Note : TJ = 25 C 0.02 0 25 50 75 100 ID, Drain Current [A] 125 1 0.2 150 Figure 5. Capacitance Characteristics 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 6000 Ciss Coss 3000 * Note: 1. VGS = 0V 2. f = 1MHz Crss 0 -1 10 FDPF2710T Rev. A 0 1.2 Figure 6. Gate Charge Characteristics VGS, Gate-Source Voltage [V] Capacitances [pF] 9000 0.4 0.6 0.8 1.0 VSD, Body Diode Forward Voltage [V] 1 10 10 VDS, Drain-Source Voltage [V] VDS = 50V VDS = 125V 8 VDS = 200V 6 4 2 * Note : ID = 50A 0 30 0 3 10 20 30 40 50 60 Qg, Total Gate Charge [nC] 70 80 www.fairchildsemi.com FDPF2710T 250V N-Channel PowerTrench MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 rDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 * Notes : 1. VGS = 0V 2. ID = 250µA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2 1 * Notes : 1. VGS = 10V 2. ID = 25A 0 -100 200 Figure 9. Maximum Safe Operating Area -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 30 100 100µs ID, Drain Current [A] Drain Current, ID [A] 1ms 10 10 ms Operation in This Area is Limited by R DS(on) 1 DC * Notes : 0.1 20 10 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0 25 0.01 1 400 10 100 Drain-Source Voltage, VDS [V] 50 75 100 125 o TC, Case Temperature [ C] 150 Thermal Response [ZθJC] Figure 11. Transient Thermal Response Curve 10 0 0.5 0.2 PDM 0.1 -1 10 t1 0.05 t2 0.02 0.01 -2 * Notes : 10 o 1. Zθ JC(t) = 2.0 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Zθ JC(t) Single pulse -3 10 -5 10 -4 10 -3 10 10 -2 -1 10 10 0 10 1 10 2 Rectangular Pulse Duration [sec] FDPF2710T Rev. A 4 www.fairchildsemi.com FDPF2710T 250V N-Channel PowerTrench MOSFET Typical Performance Characteristics (Continued) FDPF2710T 250V N-Channel PowerTrench MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDPF2710T Rev. A 5 www.fairchildsemi.com FDPF2710T 250V N-Channel PowerTrench MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDPF2710T Rev. A 6 www.fairchildsemi.com 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 9.40 ±0.20 FDPF2710T Rev. A 2.76 ±0.20 4.70 ±0.20 0.35 ±0.10 7 www.fairchildsemi.com FDPF2710T 250V N-Channel PowerTrench MOSFET Mechanical Dimensions The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 FDPF2710T Rev. A 8 www.fairchildsemi.com FDPF2710T 250V N-Channel PowerTrench MOSFET TRADEMARKS