BC556…BC560 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications These transistors are subdivided into three groups A, B and C according to their current gain. 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Symbol BC556 BC557, BC560 BC558, BC559 BC556 BC557, BC560 BC558, BC559 Collector Emitter Voltage Value 80 50 30 65 45 30 -VCBO -VCEO Emitter Base Voltage Unit V V -VEBO 5 V Collector Current (DC) -IC 100 mA Peak Collector Current -ICM 200 mA Total Power Dissipation Ptot 500 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 65 to + 150 O C C Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 2 mA Current Gain Group A B C Collector Base Cutoff Current at -VCB = 30 V Emitter Base Cutoff Current at -VEB = 5 V Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 2 mA Emitter Base Breakdown Voltage at -IE = 100 µA BC556 BC557, BC560 BC558, BC559 BC556 BC557, BC560 BC558, BC559 Symbol Min. Max. Unit hFE hFE hFE 110 200 420 220 450 800 - -ICBO - 15 nA -IEBO - 100 nA 80 50 30 65 45 30 - 5 - -V(BR)CBO -V(BR)CEO -V(BR)EBO SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/12/2007 V V V BC556…BC560 Characteristics at Ta = 25 OC Parameter Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 0.5 mA at -IC = 100 mA, -IB = 5 mA Base Emitter On Voltage at -VCE = 5 V, -IC = 2 mA at -VCE = 5 V, -IC = 10 mA Transition Frequency at -VCE = 5 V, -IC = 10 mA, f = 100 MHz Collector Base Capacitance at -VCB = 10 V, f = 1 MHz Symbol Min. Max. Unit -VCE(sat) - 0.3 0.65 V -VBE(on) 0.55 - 0.75 0.82 V fT 100 - MHz Ccb - 6 pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/12/2007