SSM9980GH,J
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
80V
R DS(ON)
45mΩ
ID
21A
DESCRIPTION
The SSM9980Gx acheives fast switching performance
with low gate charge without a complex drive circuit. It is
suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
Pb-free; RoHS-compliant TO-251 (IPAK)
and TO-252 (DPAK)
G
G
The through-hole version, the SSM9980GJ in TO-251,
is available for vertical mounting, where a small footprint
is required on the board, and/or an external heatsink is
to be attached.
These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
D
D
S
S
TO-251 (suffix J)
The SSM9980GH is in a TO-252 package, which is
widely used for commercial and industrial surface-mount
applications.
TO-252 (suffix H)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Units
VDS
Drain-source voltage
80
V
VGS
Gate-source voltage
±25
V
ID
Continuous drain current, TC = 25°C
21
A
13.4
A
80
A
41
W
0.33
W/°C
TC = 100°C
1
IDM
Pulsed drain current
PD
Total power dissipation, TC = 25°C
Linear derating factor
TSTG
Storage temperature range
-55 to 150
°C
TJ
Operating junction temperature range
-55 to 150
°C
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Units
RΘ JC
Maximum thermal resistance, junction-case
3.0
°C/W
RΘ JA
Maximum thermal resistance, junction-ambient
110
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the safe operating area.
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SSM9980GH,J
ELECTRICAL CHARACTERISTICS
Symbol
(at Tj = 25°C, unless otherwise specified)
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-source breakdown voltage
VGS=0V, ID=250uA
80
-
-
V
∆ BV DSS/∆ Tj
Breakdown voltage temperature coefficient
Reference to 25°C, ID=1mA
-
0.07
-
V/°C
RDS(ON)
Static drain-source on-resistance
VGS=10V, ID=12A
-
-
45
mΩ
VGS=4.5V, ID=8A
-
-
55
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VGS(th)
Gate threshold voltage
gfs
Forward transconductance
VDS=5V, ID=12A
-
20
-
S
IDSS
Drain-source leakage current
VDS=80V, VGS=0V
-
-
10
uA
VDS=64V ,VGS=0V, Tj = 150°C
-
-
100
uA
VGS=±25V
-
-
±100
nA
ID=12A
-
18
30
nC
IGSS
Gate-source leakage current
2
Qg
Total gate charge
Qgs
Gate-source charge
VDS=64V
-
5
-
nC
Qgd
Gate-drain ("Miller") charge
VGS=4.5V
-
11
-
nC
VDS=40V
-
11
-
ns
2
td(on)
Turn-on delay time
tr
Rise time
ID=12A
td(off)
Turn-off delay time
RG=3.3Ω , VGS=10V
tf
Fall time
RD=3.3Ω
Ciss
Input capacitance
Coss
-
20
-
ns
29
-
ns
-
30
-
ns
VGS=0V
-
1810
2900
pF
Output capacitance
VDS=25V
-
135
-
pF
Crss
Reverse transfer capacitance
f=1.0MHz
-
96
-
pF
Rg
Gate resistance
f=1.0MHz
-
Ω
1.6
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
VSD
Forward voltage 2
IS=20A, VGS=0V
-
-
trr
Reverse-recovery time 2
IS=12A, VGS=0V,
-
57
-
ns
Qrr
Reverse-recovery charge
dI/dt=100A/µs
-
140
-
nC
1.2
V
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
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SSM9980GH,J
60
50
10V
6.0V
5.0V
4.5V
ID , Drain Current (A)
50
10V
6.0V
5.0V
4.5V
T C =150 o C
ID , Drain Current (A)
T C =25 o C
40
30
20
40
30
20
V G =3.0V
10
10
V G =3.0V
0
0
0
3
6
9
12
15
0
18
Fig 1. Typical Output Characteristics
6
9
12
15
18
Fig 2. Typical Output Characteristics
54
2.2
I D = 12 A
V G =10V
2.0
ID=8A
o
T C =25 C
1.8
Normalized R DS(ON)
50
RDS(ON) (mΩ )
3
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
46
1.6
1.4
1.2
1.0
42
0.8
0.6
trr
0.4
38
3
5
7
9
-50
11
V GS , Gate-to-Source Voltage (V)
0
50
100
o
Qrr
150
T j , Junction Temperature ( C)
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance
vs. Junction Temperature
3
8
2.5
6
IS(A)
VGS(th) (V)
2
T j =150 o C
T j =25 o C
4
1.5
1
2
0.5
0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
9/19/2006 Rev.3.1
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
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SSM9980GH,J
f=1.0MHz
12
10000
I D = 12 A
C iss
V DS = 4 0V
V DS = 50 V
V DS = 64 V
8
1000
C (pF)
VGS , Gate to Source Voltage (V)
10
6
4
C oss
C rss
100
2
0
10
0
10
20
30
40
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (R thjc)
10us
100us
ID (A)
10
1ms
10ms
100ms
1
o
DC
T C =25 C
Single Pulse
0.1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
t , Pulse Width (s)
0.1
Qrr
1
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
9/19/2006 Rev.3.1
Charge
Q
Fig 12. Gate Charge Waveform
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SSM9980GH,J
PHYSICAL DIMENSIONS: TO-251 (I-PAK)
D
A
D1
c1
E2
E1
E
A1
B2
F
B1
F1
c
e
Millimeters
SYMBOLS
MIN
NOM
MAX
A
2.20
2.30
2.40
A1
0.90
1.20
1.50
B1
0.50
0.60
0.70
B2
0.60
0.72
0.90
c
c1
0.45
0.50
0.60
0.45
0.50
0.55
D
6.40
6.60
6.80
D1
5.20
5.35
5.50
E
6.80
7.00
7.20
E1
5.40
5.60
5.80
E2
1.40
1.50
1.60
e
--
2.30
--
F
7.20
7.50
7.80
F1
1.50
1.60
1.80
1.All dimensions are in millimeters.
2.Dimensions do not include mold protrusions.
e
PHYSICAL DIMENSIONS: TO-252 (D-PAK)
A
E
S
Y
M
B
O
L
c2
H
D
L4
A
A
e
SEE VIEW B
MIN.
MAX.
1.80
2.80
c
WITH PLATING
BASE METAL
SECTION A-A
θ
SEATING PLANE
L1
0.00
0.13
0.40
1.00
b3
4.80
5.90
c
0.35
0.65
c2
0.40
0.89
D
5.10
6.30
E
6.00
7.00
2.30 BSC
H
7.80
L
1.00
2.55
L1
2.20
3.05
L2
0.35
0.65
L3
0.50
2.03
L4
0.50
1.20
θ
0°
8°
11.05
A1
L2
L
A1
b
e
b
GAUGE PLANE
TO-252-3L
MILLIMETERS
A
L3
b3
VIEW B
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SSM9980GH,J
PART MARKING
PART NUMBER: 9980GH or 9989GJ
XXXXXX
DATE/LOT CODE: (YWWSSS)
Y = last digit of the year
WW = week
SSS = lot code sequence
YWWSSS
PACKING: Moisture sensitivity level MSL3
TO-252: 3000 pcs in antistatic tape on a reel packed inside a moisture barrier bag (MBB).
TO-251: 1000pcs in tubes packed inside a moisture barrier bag (MBB).
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
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responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
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