2N5015 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 0.5 AMP, 1000 Volts NPN Transistor DESIGNER’S DATA SHEET Part Number / Ordering Information 2N50 15 │ │ │ │ │ │ │ │ └ __ │ │ │ │ │ └ 1/ __ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Package /39 = TO-39 /5 = TO-5 1000V Family / Voltage FEATURES: BVCER 1000 volts Low Saturation Voltage Low Leakage at High Temperature High Gain, Low Saturation 200° C Operating, Gold Eutectic Die Attach TX, TXV, and S-Level Screening Available Maximum Ratings Symbol Value Units Collector – Emitter Voltage (RBE= 1 kΩ) VCER 1000 V Collector – Base Voltage VCBO 1000 V Emitter – Base Voltage VEBO 5 V BVCEO 450 V Peak Collector Current IC 0.5 A Peak Base Current IB 250 mA Total Device Dissipation @ TC = 100º C Derate above 100º C PD 2.0 20 W mW/ºC TOP, TSTG -65 to +200 ºC RθJC 50 (typ 22) ºC/W Collector – Emitter Breakdown Voltage Operating and Storage Temperature Thermal Resistance, Junction to Case Notes: TO-39 TO-5 1/ For ordering information, price, operating curves, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless otherwise specified, maximum ratings/electrical characteristics at 25°C. 4/ Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2% NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0043E DOC 2N5015 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristic 3/ Symbol Min Typ Max Units Collector – Emitter Breakdown Voltage (IC = 200 µADC, RBE = 1 KΩ) BVCER 1000 1300 –– V Collector–Base Breakdown Voltage (IC = 200 µADC) BVCBO 1000 - –– V Emitter–Base Breakdown Voltage (IE = 50 µADC) BVEBO 5 7 –– V Collector Cutoff Current (VCB = 760 V) (VCB = 760 V, TC = 100°C) ICBO –– –– 0.08 6 12 100 µAdc Emitter Cutoff Current (VEB= 4V) IEBO — 0.003 20 µA hFE 10 30 70 80 180 –– VCE(Sat) –– 0.07 1.8 Vdc VBE(Sat) –– 0.7 1.0 Vdc fT 20 25 –– MHz Cob –– 12.5 30 pF td tr ts tf –– –– –– –– 50 100 1500 450 200 1200 3000 800 nsec DC Current Gain 4/ (IC = 5 mADC, VCE = 10 VDC) (IC = 20 mADC, VCE = 10 VDC) Collector – Emitter Saturation Voltage (IC = 20 mADC, IB = 5 mADC) 4/ Base – Emitter Saturation Voltage 4/ (IC = 20 mADC, IB = 5 mADC) Current Gain Bandwidth Product (IC = 20 mADC, VCE = 10 VDC, f = 20 MHz) Output Capacitance (VCB = 10 VDC, IE = 0 ADC, f = 1.0 MHz) Delay Time Rise Time Storage Time Fall Time VCC= 125 VDC, IC= 100 mADC, IB1= 20 mADC IB2= 20 mADC pw= 2 us Case Outline: TO-39 Case Outline: TO-5 PIN 1: EMITTER PIN 2: BASE PIN 3: COLLECTOR PIN 1: EMITTER PIN 2: BASE PIN 3: COLLECTOR NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0043E DOC