SPT6693 Solid State Devices, Inc. 15 AMPS 400 Volts High Voltage – High Energy NPN Transistor 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SPT6693__ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level • • • • • • • Features: Collector to Base Voltage 650 V Min High Power, 175 Watts High Gain, Low Saturation 200oC Operating Temperature Isolated Package with Low Theta Equivalent to MIL-PRF-19500/538 TX, TXV, S-Level Screening Available. Consult Factory. Maximum Ratings Symbol Value Units Collector – Emitter Voltage VCEO 400 Volts Collector – Base Voltage VCBO 650 Volts Emitter – Base Voltage VEBO 8 Volts Collector Current IC 15 Amps Base Current IB 7 Amps Total Power Dissipation @ TC = 25ºC Derate above 25ºC PD 175 1 Watts W/ºC T OP & TSTG -65 to +200 ºC R0JC 1.0 ºC/W Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) TO-61 (/61) Notes: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For ordering information, price, and availability, contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0114A DOC SPT6693 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristics Symbol Min Max Units BVCEO 400 –– Volts (VCEX = 650 V, VEB = 1.5 V) (VCEX = 400 V, VEB = 1.5 V) (VCEX = 650 V, VEB = 1.5 V, TA = 125°C) ICEX1 ICEX2 ICEX3 –– 1 0.5 50 μA (VCE = 650 V) ICBO –– 1 mA (VEB = 8 V) IEBO –– 2 mA DC Current Gain* (IC = 1 A, VCE = 3 V) (IC = 15 A, VCE = 3 V) (IC = 15 A, VCE = 3 V, TA = -55°C) hFE 15 8 4 40 20 –– Collector – Emitter Saturation Voltage* (IC = 15 A, IB = 3.0 A) (IC = 15 A, IB = 3.0 A, TA = 125°C) VCE (SAT)1 VCE (SAT)2 –– 1.0 2.0 Volts Base – Emitter Saturation Voltage* (IC = 15 A, IB = 3.0 A) VBE (SAT) –– 1.5 Volts Current Gain – Bandwidth Product VCE = 10 V, IC = 1 A, f = 5 MHz fT 15 50 MHz VCB = 10 V, IE = 0 A, f = 1.0MHz Cob 150 500 pF td –– 100 ns tr –– 600 ns ts –– 2.5 tf –– Collector – Emitter Blocking Voltage* Collector – Emitter Cutoff Current (IC = 200 mA) Collector Cutoff Current Emitter Cutoff Current Output Capacitance Delay Time t(on) Rise Time Storage Time μs t(off) Fall Time tc Cross Over Time Safe Operating Area, DC Safe Operating Area, clamped switching SOA1 SOA2 SOA3 SOA4 –– 0.5 0.5 μs μs VCE = 11.7 V, IC = 15 A, 1 sec VCE = 25 V, IC = 7 A, 1 sec VCE = 100 V, IC = 0.25 A, 1 sec VCE = 400 V, IC = 10 mA, 1 sec VCC = 15 V, VBB2 = 5 V, RBB1 = 5 Ω, RBB2 = 1.5Ω, L = 50µH, Vclamp = 450V, IC = 15 A NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0114A DOC SPT6693 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Case Outline: TO-61 Available Part Numbers: SPT6693 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. Package TO-61 (/61) PIN ASSIGNMENT (Standard) Emitter Collector Pin 3 Pin 1 DATA SHEET #: TR0114A Base Pin 2 DOC