SPT5502 and SPT5503 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 1 AMP HIGH VOLTAGE / HIGH SPEED NPN TRANSISTOR DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SPT5502 SPT5503 __ __ __ __ │ │ │ │ │ └ └ Screening 2/ 700 - 800 VOLTS 6 WATTS __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Package __ = TO-5 Features: • • • • BVCBO to 800 Volts Fast Switching: tD = 100 nsec max Good Safe Operating Area Linear Gain from 50mA to 1.0A • TX, TXV, S-Level Screening Available2/ - Consult Factory Maximum Ratings3/ Collector – Emitter Voltage Collector – Emitter Voltage Collector – Base Voltage Symbol SPT5502 SPT5503 SPT5502 SPT5503 SPT5502 SPT5503 Value 700 800 350 400 700 800 VCER VCEO VCBO Emitter – Base Voltage Units V V V VEBO 10 V Collector Current IC 1.0 A Base Current IB 0.5 A PD 6.0 34.3 W mW/ºC Top & Tstg -65 to +200 ºC RθJC 29 ºC/W Total Device Dissipation Derate above TC = 25ºC Operating & Storage Temperature TC = 25ºC Thermal Resistance NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, Operating Curves, and Availability Contact Factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0026C TO-5 DOC SPT5502 and SPT5503 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 3/ Electrical Characteristic Symbol SPT5502 SPT5503 VCE = 300VDC VCE = 400VDC Collector – Emitter Breakdown Voltage (IC = 200μA, IB = 0A, RBE = 1kΩ) Collector – Cutoff Current (IB = 0ADC) TC = 25°C TC = 100°C Collector – Cutoff Current (VCE = Rated VCE, VEB(off) = 1.5VDC) Collector – Cutoff Current (VCB = Rated VCB, IE = 0ADC) Emitter – Cutoff Current (VBE = 10 VDC, IC = 0ADC) DC Current Gain * IC = 50mADC IC = 0.5ADC IC = 1ADC (VCE = 5VDC) Min Max 700 800 –– –– –– –– 10 10 ICEX –– –– 10 0.5 µADC mADC ICBO –– 10 µADC IEBO –– 1 µADC hFE 15 10 5 –– 90 50 –– BVCER ICEO Units VDC µADC Collector – Emitter Saturation Voltage * IC = 0.5ADC, IB = 0.1ADC IC = 1ADC, IB = 0.25ADC VCE(Sat) –– –– 0.5 1.0 VDC Base – Emitter Saturation Voltage * IC = 0.5ADC, IB = 0.1ADC IC = 1ADC, IB = 0.25ADC VBE(Sat) –– –– 1.0 1.2 VDC fT 35 –– MHz Cob –– 35 pF IS/B 50 –– mADC Current Gain Bandwidth Product (VCE = 10VDC, IC = 100mADC, f = 1MHz) Output Capacitance (VCB = 20VDC, IE = 0, f = 1MHz) Second Breakdown Collector Current with Base Forward Biased (VCE = 200VDC, t = 1 sec(Non-Repetitive)) Delay Time Rise Time VCC = 125VDC, IC = 1ADC, IB1 = 200mADC td tr –– –– 100 300 nsec Storage Time VCC = 125VDC, IC = 1ADC, IB1 = IB2 = 200mADC ts tf –– –– 3 500 µsec nsec Fall Time NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0026C DOC SPT5502 and SPT5503 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com TO-5 1.500 MIN .260 .240 Ø.021 .016 .210 Ø.190 PIN 3 PIN 2 Ø.370 Ø.335 .335 .305 45° PIN 1 .045 .029 .125 .009 .034 .028 PIN ASSIGNMENT Package TO-5 Pin 1 Emitter NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. Pin 2 Base Pin 3 (Case) Collector DATA SHEET #: TR0026C DOC