SFT8600/5 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 1 AMP 1000 Volts NPN Transistor DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT8600 __ __ │ └ Screening 2/ __ = Not Screened │ │ TX = TX Level │ TXV = TXV Level │ S = S Level └ Package /5 = TO-5 Maximum Ratings FEATURES: BVCEO to 400 volts Very Low Saturation Voltage Very Low Leakage High Gain from 20 mA to 250 mA 200°C Operating, Gold Eutectic Die Attach Superior Performance over JEDEC 2N5010-15 Series High Speed Switching tf = 0.4µS TYP Symbol Value Units Collector – Emitter Voltage (RBE = 1KΩ) VCEO VCER 400 1000 V Collector – Base Voltage VCBO 1000 V Emitter – Base Voltage VEBO 6 V Collector Current IC 1 A Base Current IB 100 mA Total Device Dissipation @ TC = 100º C Derate above 25º C PD 3.3 33 W mW/ºC Tj, Tstg -65 to +200 ºC RθJC 30 ºC/W Operating and Storage Temperature Thermal Resistance, Junction to Case NOTES: 1/ For ordering information, price, operating curves, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: XN0033J TO-5 (/5) DOC SFT8600/5 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristic Symbol Min Max Units BVCEO BVCER 400 1000 –– V BVCBO 1000 –– V BVEBO 6 –– V ICBO –– 10 500 µAdc ICEO –– 10 µAdc IEBO –– 1 µAdc hFE 10 30 40 20 15 200 –– Collector – Emitter Saturation Voltage* (IC= 20mAdc, IB= 2mAdc) (IC= 100mAdc, IB=10mAdc) VCE(Sat) –– –– 0.3 0.5 Vdc Base – Emitter Saturation Voltage * (IC= 20mAdc, IB= 2mAdc) (IC=100mAdc, IB=10mAdc) VBE(Sat) –– –– 0.8 1.0 Vdc fT 8.0 –– MHz Cob –– 15 pF td tr ts tf --- 50 150 3 800 nsec nsec µsec nsec Collector – Emitter Breakdown Voltage (IC= 10mAdc) (IC= 20µAdc, RBE = 1KΩ) Collector–Base Breakdown Voltage (IC= 20µAdc) Emitter–Base Breakdown Voltage (IE= 20µAdc) Collector Cutoff Current (VCB= 800V) (VCB= 800V @ TC= 150°C) Collector Cutoff Current (VCE= 400 Vdc) Emitter Cutoff Current (VEB= 4V) DC Current Gain* (IC= 100mAdc, VCE= 5Vdc, TC= -55°) (IC= 5mAdc, VCE= 5Vdc) (IC= 10mAdc, VCE= 5Vdc) (IC= 100mAdc, VCE= 5Vdc) (IC= 250mAdc, VCE= 5Vdc) Current Gain Bandwidth Product (IC= 100mAdc, VCE= 10Vdc, f= 10MHz) Output Capacitance (VCB= 20Vdc, IE= 0 Adc, f= 1.0MHz) Delay Time Rise Time Storage Time Fall Time (VCC = 125Vdc, IC = 100 mAdc, IB1 = 20 mAdc, IB2 = 40 mAdc) --- * Pulse Test: Pulse Width = 300 µS, Duty Cycle = 2% NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: XN0033J DOC SFT8600/5 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com CASE OUTLINE: TO-5 FIGURE 1 OUTLINE AND DIMENSIONS All dimensions are in inches Tolerances: (unless otherwise specified) XX: ±0.01” XXX: ±0.005” Pin 1: Emitter Pin 2: Base Pin 3: Collector Case: Collector FIGURE 2 SAFE OPERATING AREA (t = 1 sec) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: XN0033J DOC